Invention Grant
- Patent Title: Thin film transistor and method of manufacturing the same
- Patent Title (中): 薄膜晶体管及其制造方法
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Application No.: US12453293Application Date: 2009-05-06
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Publication No.: US08120029B2Publication Date: 2012-02-21
- Inventor: Kyung-bae Park , Myung-kwan Ryu , Byung-wook Yoo , Sang-yoon Lee , Tae-sang Kim , Jang-yeon Kwon , Kyung-seok Son , Ji-sim Jung
- Applicant: Kyung-bae Park , Myung-kwan Ryu , Byung-wook Yoo , Sang-yoon Lee , Tae-sang Kim , Jang-yeon Kwon , Kyung-seok Son , Ji-sim Jung
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0090007 20080911
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT, is reduced due to the intermediate layer. Accordingly, the TFT may be stably driven.
Public/Granted literature
- US20100059756A1 Thin film transistor and method of manufacturing the same Public/Granted day:2010-03-11
Information query
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