Invention Grant
- Patent Title: Semiconductor device having a conductive bump
- Patent Title (中): 具有导电凸块的半导体器件
-
Application No.: US12722794Application Date: 2010-03-12
-
Publication No.: US08120176B2Publication Date: 2012-02-21
- Inventor: Dong-Kil Shin , Shle-Ge Lee , Jong-Joo Lee , Jong-Ho Lee
- Applicant: Dong-Kil Shin , Shle-Ge Lee , Jong-Joo Lee , Jong-Ho Lee
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2009-0021719 20090313
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
In one embodiment, a semiconductor device includes a semiconductor substrate and a bonding pad disposed thereon. The semiconductor device also includes a passivation layer, a buffer layer, and an insulating layer sequentially stacked on the semiconductor substrate. According to one aspect, a first recess is defined within the passivation layer, the buffer layer, and the insulating layer to expose at least a region of the bonding pad and a second recess is defined within the insulating layer to expose at least a region of the buffer layer and spaced apart from the first recess such that a portion of the insulating layer is interposed therebetween. Further, the semiconductor device includes a conductive solder bump disposed within the first and second recesses. The conductive solder bump may be connected to the bonding pad in the first recess and supported by the buffer layer through a protrusion of the conductive solder bump extending into the second recess.
Public/Granted literature
- US20100230811A1 SEMICONDUCTOR DEVICE HAVING A CONDUCTIVE BUMP Public/Granted day:2010-09-16
Information query
IPC分类: