发明授权
- 专利标题： Field-effect transistor
- 专利标题（中）： 场效应晶体管
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申请号： US12311771申请日： 2007-10-19
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公开(公告)号： US08124964B2公开(公告)日： 2012-02-28
- 发明人: Kazuo Takimiya , Hideaki Ebata , Hirokazu Kuwabara , Masaaki Ikeda , Tatsuto Yui
- 申请人： Kazuo Takimiya , Hideaki Ebata , Hirokazu Kuwabara , Masaaki Ikeda , Tatsuto Yui
- 申请人地址： JP Tokyo JP Hiroshima
- 专利权人： Nippon Kayaku Kabushiki Kaisha,Hiroshima University
- 当前专利权人： Nippon Kayaku Kabushiki Kaisha,Hiroshima University
- 当前专利权人地址： JP Tokyo JP Hiroshima
- 代理机构： Nields, Lemack & Frame, LLC
- 优先权： JP2006-285872 20061020; JP2007-060569 20070309
- 国际申请： PCT/JP2007/070416 WO 20071019
- 国际公布： WO2008/047896 WO 20080424
- 主分类号： H01L29/08
- IPC分类号： H01L29/08
摘要：
Disclosed is a field-effect transistor characterized by using a compound represented by the formula (1) below as a semiconductor material. (In the formula (1), X1 and X2 independently represent a sulfur atom, a selenium atom or a tellurium atom; and R1 and R2 independently represent an unsubstituted or halogeno-substituted C1-C36 aliphatic hydrocarbon group.)
公开/授权文献
- US20100032655A1 Field-effect transistor 公开/授权日：2010-02-11
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