Invention Grant
US08125797B2 Radiation tolerant electrical component with non-radiation hardened FET
有权
具有非辐射硬化FET的耐辐射电气元件
- Patent Title: Radiation tolerant electrical component with non-radiation hardened FET
- Patent Title (中): 具有非辐射硬化FET的耐辐射电气元件
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Application No.: US11333457Application Date: 2006-01-17
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Publication No.: US08125797B2Publication Date: 2012-02-28
- Inventor: Steven E. Summer
- Applicant: Steven E. Summer
- Applicant Address: US NY Shirley
- Assignee: Modular Devices, Inc.
- Current Assignee: Modular Devices, Inc.
- Current Assignee Address: US NY Shirley
- Agency: Feldman Law Group, P.C.
- Agent Stephen E. Feldman
- Main IPC: H02M3/335
- IPC: H02M3/335 ; H02H7/122
Abstract:
A radiation tolerant electrical component is provided without a radiation hardened material FET. A p-channel MOSFET provides switching capabilities in radiated environments because its gate voltage starts at a negative value and becomes more negative with exposure to radiation. Therefore, the gate is still controllable when exposed to radiation.
Public/Granted literature
- US20060181905A1 Radiation tolerant electrical component with non-radiation hardened FET Public/Granted day:2006-08-17
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