Invention Grant
- Patent Title: Hidden plating traces
- Patent Title (中): 隐藏电镀痕迹
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Application No.: US12493582Application Date: 2009-06-29
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Publication No.: US08129272B2Publication Date: 2012-03-06
- Inventor: Hem Takiar , Cheeman Yu , Ken Jian Ming Wang , Chin-Tien Chiu , Han-Shiao Chen , Chih-Chin Liao
- Applicant: Hem Takiar , Cheeman Yu , Ken Jian Ming Wang , Chin-Tien Chiu , Han-Shiao Chen , Chih-Chin Liao
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A strengthened semiconductor die substrate and package are disclosed. The substrate may include contact fingers formed with nonlinear edges. Providing a nonlinear contour to the contact finger edges reduces the mechanical stress exerted on the semiconductor die which would otherwise occur with straight edges to the contact fingers. The substrate may additionally or alternatively include plating traces extending at an angle from the contact fingers. Extending at an angle, at least the ends of the plating traces at the edge of the substrate are covered beneath a lid in which the semiconductor package is encased. Thus, when in use with a host device, contact between the ends of the plating traces beneath the lid and contact pins of the host device is avoided.
Public/Granted literature
- US20090263969A1 HIDDEN PLATING TRACES Public/Granted day:2009-10-22
Information query
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