There is disclosed a method for manufacturing a single-crystal silicon solar cell including the steps of: implanting a hydrogen ion or a rare gas ion into a single-crystal silicon substrate; forming a transparent insulator layer on a metal substrate; performing a surface activation treatment with respect to at least one of the ion implanted surface and a surface of the transparent insulator layer; bonding these surfaces; mechanically delaminating the single-crystal silicon substrate to provide a single-crystal silicon layer; forming a plurality of second conductivity type diffusion regions in the delaminated surface side of the single-crystal silicon layer so that a plurality of first conductivity type regions and the plurality of second conductivity regions are present in the delaminated surface of the single-crystal silicon layer; respectively forming a plurality of individual electrodes on the plurality of first and second conductivity type regions of the single-crystal silicon layer; forming respective collecting electrodes; and forming a transparent protective film.