Invention Grant
- Patent Title: Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset current
- Patent Title (中): 制造具有增强结构以减少复位电流的相变存储器单元的方法
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Application No.: US12592816Application Date: 2009-12-03
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Publication No.: US08133757B2Publication Date: 2012-03-13
- Inventor: Hyun-Suk Kwon , Young-Soo Lim , Sung-Un Kwon , Yong-Ho Ha , Jeong-Hee Park , Joon-Sang Park , Myung-Jin Kang , Doo-Hwan Park
- Applicant: Hyun-Suk Kwon , Young-Soo Lim , Sung-Un Kwon , Yong-Ho Ha , Jeong-Hee Park , Joon-Sang Park , Myung-Jin Kang , Doo-Hwan Park
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2008-0122316 20081204
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an opening and is formed on the lower electrode and the substrate. The opening exposes the lower electrode and has a width gradually decreasing downward. The phase changeable material layer fills the opening and partially covers an upper face of the insulating interlayer structure. The upper electrode is formed on the phase changeable material layer.
Public/Granted literature
- US20100144135A1 Method of manufacturing a phase changeable memory unit Public/Granted day:2010-06-10
Information query
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