发明授权
- 专利标题： Semiconductor apparatus and fabrication method of the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13010962申请日： 2011-01-21
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公开(公告)号： US08134153B2公开(公告)日： 2012-03-13
- 发明人: Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
- 申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2002-305084 20021018
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L31/36 ; H01L31/376 ; H01L31/20
摘要：
It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.
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