发明授权
- 专利标题: Semiconductor device and method of manufacturing semiconductor device
- 专利标题(中): 半导体装置及其制造方法
-
申请号: US12832177申请日: 2010-07-08
-
公开(公告)号: US08138609B2公开(公告)日: 2012-03-20
- 发明人: Michio Horiuchi , Yasue Tokutake , Yuichi Matsuda , Tomoo Yamasaki , Yuta Sakaguchi
- 申请人: Michio Horiuchi , Yasue Tokutake , Yuichi Matsuda , Tomoo Yamasaki , Yuta Sakaguchi
- 申请人地址: JP Nagano
- 专利权人: Shinko Electric Industries Co., Ltd.
- 当前专利权人: Shinko Electric Industries Co., Ltd.
- 当前专利权人地址: JP Nagano
- 代理机构: IPUSA, PLLC
- 优先权: JP2009-168596 20090717
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
In a semiconductor device, a substrate includes a plurality of line conductors which penetrate the substrate from a top surface to a bottom surface of the substrate. A semiconductor chip is secured in a hole of the substrate. A first insulating layer is formed on the top surfaces of the substrate and the semiconductor chip. A first wiring layer is formed on the first insulating layer and electrically connected via through holes of the first insulating layer to the semiconductor chip and some line conductors exposed to one of the through holes. A second insulating layer is formed on the bottom surfaces of the substrate and the semiconductor chip. A second wiring layer is formed on the second insulating layer and electrically connected via a through hole of the second insulating layer to some line conductors exposed to the through hole.
公开/授权文献
信息查询
IPC分类: