发明授权
- 专利标题: Omega shaped nanowire tunnel field effect transistors fabrication
- 专利标题(中): 欧米茄形纳米线隧道场效应晶体管制造
-
申请号: US12630939申请日: 2009-12-04
-
公开(公告)号: US08143113B2公开(公告)日: 2012-03-27
- 发明人: Sarunya Bangsaruntip , Josephine B. Chang , Isaac Lauer , Jeffrey W. Sleight
- 申请人: Sarunya Bangsaruntip , Josephine B. Chang , Isaac Lauer , Jeffrey W. Sleight
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method for forming a nanowire tunnel field effect transistor device includes forming a nanowire connected to a first pad region and a second pad region, the nanowire including a core portion and a dielectric layer, forming a gate structure on the dielectric layer of the nanowire, forming a first protective spacer on portions of the nanowire, implanting ions in a first portion of the exposed nanowire and the first pad region, implanting in the dielectric layer of a second portion of the exposed nanowire and the second pad region, removing the dielectric layer from the second pad region and the second portion, removing the core portion of the second portion of the exposed nanowire to form a cavity, and epitaxially growing a doped semiconductor material in the cavity to connect the exposed cross sections of the nanowire to the second pad region.
公开/授权文献
- US20110133161A1 Omega Shaped Nanowire Tunnel Field Effect Transistors 公开/授权日:2011-06-09