Invention Grant
- Patent Title: Method for fabricating crown-shaped capacitor
- Patent Title (中): 制造冠状电容器的方法
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Application No.: US12979775Application Date: 2010-12-28
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Publication No.: US08143136B2Publication Date: 2012-03-27
- Inventor: Chao-Hsi Chung
- Applicant: Chao-Hsi Chung
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Memory Corporation
- Current Assignee: Taiwan Memory Corporation
- Current Assignee Address: TW Hsin-Chu
- Agency: Brich, Stewart, Kolasch & Birch, LLP
- Priority: TW98145470A 20091229
- Main IPC: H01L21/8242
- IPC: H01L21/8242 ; H01L29/41

Abstract:
A method for fabricating a crown-shaped capacitor includes providing a first dielectric layer with a protective pillar formed thereover, including a first conductive layer, a protective layer, and a mask layer. A second conductive layer is formed over a sidewall of the protective pillar. A first capacitance layer and a third conductive layer are formed over the first dielectric layer. A sacrificial layer is formed over the third conductive layer. The sacrificial layer, the third conductive layer, the first capacitance layer, the second conductive layer, and the mask layer above the protective layer are partially removed. The second conductive layer and the third conductive are removed to form a recess adjacent to the first capacitance layer. The protective layer is removed and an opening is formed to expose the first and second conductive layers. A second capacitance layer and a fourth conductive layer are formed in the opening. The sacrificial layer is removed to expose the third conductive layer.
Public/Granted literature
- US20110159662A1 METHOD FOR FABRICATING CROWN-SHAPED CAPACITOR Public/Granted day:2011-06-30
Information query
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