发明授权
- 专利标题： Method of operating magnetic random access memory device
- 专利标题（中）： 操作磁性随机存取存储器件的方法
-
申请号： US12458411申请日： 2009-07-10
-
公开(公告)号： US08144504B2公开(公告)日： 2012-03-27
- 发明人: Kwang-seok Kim , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Hyung-soon Shin , Seung-yeon Lee , Seung-jun Lee
- 申请人： Kwang-seok Kim , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Hyung-soon Shin , Seung-yeon Lee , Seung-jun Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey, & Pierce, P.L.C.
- 优先权： KR10-2008-0067205 20080710
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.
公开/授权文献
- US20100008130A1 Method of operating magnetic random access memory device 公开/授权日：2010-01-14
信息查询
