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    Semiconductor memory device and method of programming the same
    3.
    发明授权
    Semiconductor memory device and method of programming the same 有权
    半导体存储器件及其编程方法

    公开(公告)号：US07672154B2

    公开(公告)日：2010-03-02

    申请号：US12073678

    申请日：2008-03-07

    申请人： In-jun Hwang ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    发明人： In-jun Hwang ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1697 ,  G11C11/1653 ,  G11C11/1673 ,  G11C11/1675

    摘要： Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.

    摘要翻译： 提供一种半导体存储器件及其编程方法。 半导体存储器件包括模式输入值生成单元和逻辑运算单元。 模式输入值生成单元将当前驱动电路的输入值之间的连接状态改变为对应于至少两种操作模式中的每一种，并且响应于所述至少两种操作模式而连接到当前驱动电路的磁存储单元的逻辑功能 每个操作模式。 逻辑操作单元对根据每个操作模式定义的至少两个磁存储器单元的逻辑功能进行逻辑运算，并产生逻辑运算的结果。

    Semiconductor memory device and magneto-logic circuit
    4.
    发明授权
    Semiconductor memory device and magneto-logic circuit 有权
    半导体存储器件和磁逻辑电路

    公开(公告)号：US07755930B2

    公开(公告)日：2010-07-13

    申请号：US11976007

    申请日：2007-10-19

    申请人： Kee-won Kim ,  Young-jin Cho ,  Hyung-soon Shin ,  Sung-hoon Choa ,  Seung-jun Lee ,  In-jun Hwang

    发明人： Kee-won Kim ,  Young-jin Cho ,  Hyung-soon Shin ,  Sung-hoon Choa ,  Seung-jun Lee ,  In-jun Hwang

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  Y10S977/935

    摘要： Provided are a semiconductor memory device and a magneto-logic circuit which change the direction of a magnetically induced current according to a logical combination of logic states of a plurality of input values. The semiconductor memory device comprises a current driving circuit, a magnetic induction layer, and a resistance-variable element. The current driving circuit receives a plurality of input values and changes the direction of a magnetically induced current according to a logical combination of logic states of the input values. The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current. The resistance-variable element has a resistance varying according to the direction of the magnetism induced by the magnetic induction layer.

    摘要翻译： 提供了根据多个输入值的逻辑状态的逻辑组合来改变磁感应电流的方向的半导体存储器件和磁电逻辑电路。 半导体存储器件包括电流驱动电路，磁感应层和电阻可变元件。 电流驱动电路根据输入值的逻辑状态的逻辑组合接收多个输入值并改变磁感应电流的方向。 磁感应层诱导具有根据磁感应电流的方向变化的方向的磁性。 电阻可变元件具有根据由磁感应层感应的磁性方向而变化的电阻。

    Semiconductor memory device and magneto-logic circuit
    7.
    发明申请
    Semiconductor memory device and magneto-logic circuit 有权
    半导体存储器件和磁逻辑电路

    公开(公告)号：US20080219045A1

    公开(公告)日：2008-09-11

    申请号：US11976007

    申请日：2007-10-19

    申请人： Kee-won Kim ,  Young-jin Cho ,  Hyung-soon Shin ,  Sung-hoon Choa ,  Seung-jun Lee ,  In-jun Hwang

    发明人： Kee-won Kim ,  Young-jin Cho ,  Hyung-soon Shin ,  Sung-hoon Choa ,  Seung-jun Lee ,  In-jun Hwang

    IPC分类号： G11C11/00 ,  G11C8/00

    CPC分类号： G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  Y10S977/935

    摘要： Provided are a semiconductor memory device and a magneto-logic circuit which change the direction of a magnetically induced current according to a logical combination of logic states of a plurality of input values. The semiconductor memory device comprises a current driving circuit, a magnetic induction layer, and a resistance-variable element. The current driving circuit receives a plurality of input values and changes the direction of a magnetically induced current according to a logical combination of logic states of the input values. The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current. The resistance-variable element has a resistance varying according to the direction of the magnetism induced by the magnetic induction layer.

    摘要翻译： 提供了根据多个输入值的逻辑状态的逻辑组合来改变磁感应电流的方向的半导体存储器件和磁电逻辑电路。 半导体存储器件包括电流驱动电路，磁感应层和电阻可变元件。 电流驱动电路根据输入值的逻辑状态的逻辑组合接收多个输入值并改变磁感应电流的方向。 磁感应层引起具有根据磁感应电流的方向变化的方向的磁性。 电阻可变元件具有根据由磁感应层感应的磁性方向而变化的电阻。