摘要:
Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.
摘要:
Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.
摘要:
Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.
摘要:
Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.
摘要:
A magnetic memory device includes a lower structure or an antiferromagnetic layer, a pinned layer, an information storage layer, and a free layer formed on the lower structure or the antiferromagnetic layer. In a method of operating a magnetic memory device, information from the storage information layer is read or stored after setting the magnetization of the free layer in a first magnetization direction. The information is stored when the first magnetization direction is opposite to a magnetization direction of the pinned layer, but is read when the first magnetization direction is the same as the magnetization direction of the pinned layer.
摘要:
A magnetic memory device includes a lower structure or an antiferromagnetic layer, a pinned layer, an information storage layer, and a free layer formed on the lower structure or the antiferromagnetic layer. In a method of operating a magnetic memory device, information from the storage information layer is read or stored after setting the magnetization of the free layer in a first magnetization direction. The information is stored when the first magnetization direction is opposite to a magnetization direction of the pinned layer, but is read when the first magnetization direction is the same as the magnetization direction of the pinned layer.
摘要:
Oscillators and method of operating the same are provided, the oscillators include a magnetic layer, and a magnetization fixing element configured to fix a magnetization direction of the magnetic layer. The oscillators generate a signal by using precession of a magnetic moment of the magnetic layer.
摘要:
Oscillators and method of operating the same are provided, the oscillators include a magnetic layer, and a magnetization fixing element configured to fix a magnetization direction of the magnetic layer. The oscillators generate a signal by using precession of a magnetic moment of the magnetic layer.
摘要:
MTJ cell based logic circuits and MTJ cell drivers having improved operating speeds compared to the conventional art, and operating methods thereof are described. An MTJ cell driver may include a lower electrode, an MTJ cell on the lower electrode, an upper electrode on the MTJ cell, and first through third input lines arranged in parallel above the upper electrode
摘要:
MTJ cell based logic circuits and MTJ cell drivers having improved operating speeds compared to the conventional art, and operating methods thereof are described. An MTJ cell driver may include a lower electrode, an MTJ cell on the lower electrode, an upper electrode on the MTJ cell, and first through third input lines arranged in parallel above the upper electrode