发明授权
- 专利标题： Semiconductor structure and method for making same
- 专利标题（中）： 半导体结构及其制造方法
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申请号： US12894190申请日： 2010-09-30
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公开(公告)号： US08148257B1公开(公告)日： 2012-04-03
- 发明人: Hans-Joachim Barth , Gottfried Beer , Joern Plagmann , Jens Pohl , Werner Robl , Rainer Steiner , Mathias Vaupel
- 申请人： Hans-Joachim Barth , Gottfried Beer , Joern Plagmann , Jens Pohl , Werner Robl , Rainer Steiner , Mathias Vaupel
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Infineon Techn AG
- 代理商 Philip H. Schlazer
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/4763 ; H01L21/469
摘要：
One or more embodiments relate to a method of forming an electronic device, comprising: providing a workpiece; forming a first barrier layer over the workpiece; forming an intermediate conductive layer over the first barrier layer; forming a second barrier layer over the intermediate conductive layer; forming a seed layer over the second barrier layer; removing a portion of the seed layer to leave a remaining portion of the seed layer and to expose a portion of the second barrier layer; and electroplating a fill layer on the remaining portion of the seed layer.
公开/授权文献
- US20120080791A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING SAME 公开/授权日：2012-04-05
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