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发明授权
US08148786B2 Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate 有权
互补金属氧化物半导体集成电路使用升高源极漏极和替代金属栅极

Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate
摘要：
A complementary metal oxide semiconductor integrated circuit may be formed with a PMOS device formed using a replacement metal gate and a raised source drain. The raised source drain may be formed of epitaxially deposited silicon germanium material that is doped p-type. The replacement metal gate process results in a metal gate electrode and may involve the removal of a nitride etch stop layer.
摘要（中）：

互补金属氧化物半导体集成电路可以形成有使用替换金属栅极和升高源极漏极形成的PMOS器件。 凸起的源极漏极可以由掺杂p型的外延沉积的硅锗材料形成。 替代金属栅极工艺导致金属栅电极，并且可能涉及去除氮化物蚀刻停止层。

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