Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate

Invention Grant

US08148786B2 Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate 有权

Title translation: 互补金属氧化物半导体集成电路使用升高源极漏极和替代金属栅极

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Patent Title: Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate
Patent Title (中): 互补金属氧化物半导体集成电路使用升高源极漏极和替代金属栅极
Application No.: US12493291

Application Date: 2009-06-29
Publication No.: US08148786B2

Publication Date: 2012-04-03
Inventor: Jack Kavalieros , Annalisa Cappellani , Justin K. Brask , Mark L. Doczy , Matthew V. Metz , Suman Datta , Chris E. Barns , Robert S. Chau
Applicant: Jack Kavalieros , Annalisa Cappellani , Justin K. Brask , Mark L. Doczy , Matthew V. Metz , Suman Datta , Chris E. Barns , Robert S. Chau
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agency: Trop, Pruner & Hu, P.C.
Main IPC: H01L21/76
IPC: H01L21/76

Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate

Abstract:

A complementary metal oxide semiconductor integrated circuit may be formed with a PMOS device formed using a replacement metal gate and a raised source drain. The raised source drain may be formed of epitaxially deposited silicon germanium material that is doped p-type. The replacement metal gate process results in a metal gate electrode and may involve the removal of a nitride etch stop layer.

Abstract(Chinese):

互补金属氧化物半导体集成电路可以形成有使用替换金属栅极和升高源极漏极形成的PMOS器件。凸起的源极漏极可以由掺杂p型的外延沉积的硅锗材料形成。替代金属栅极工艺导致金属栅电极，并且可能涉及去除氮化物蚀刻停止层。

Public/Granted literature

US20090261391A1 Complementary Metal Oxide Semiconductor Integrated Circuit Using Raised Source Drain and Replacement Metal Gate Public/Granted day:2009-10-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/76	...组件间隔离区的制作