发明授权
- 专利标题: Semiconductor device and method for manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12468280申请日: 2009-05-19
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公开(公告)号: US08148818B2公开(公告)日: 2012-04-03
- 发明人: Shunpei Yamazaki , Yoshiaki Oikawa , Hironobu Shoji , Yutaka Shionoiri , Kiyoshi Kato , Masataka Nakada
- 申请人: Shunpei Yamazaki , Yoshiaki Oikawa , Hironobu Shoji , Yutaka Shionoiri , Kiyoshi Kato , Masataka Nakada
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2008-136082 20080523
- 主分类号: H01L23/29
- IPC分类号: H01L23/29
摘要:
A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown of the semiconductor integrated circuit (e.g., malfunction of a circuit and damage to a semiconductor element) due to electrostatic discharge. Further, with use of a pair of insulators between which the semiconductor integrated circuit is sandwiched, a highly reliable semiconductor having resistance can be provided while achieving reduction in the thickness and size. Moreover, also in the manufacturing process, external stress, or defective shapes or deterioration in characteristics resulted from electrostatic discharge are prevented, and thus the semiconductor device can be manufactured with high yield.
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