发明授权
US08153336B2 Photomask substrate, photomask substrate forming member, photomask substrate fabricating method, photomask, and exposing method that uses the photomask
有权
光掩模基板，光掩模基板形成部件，光掩模基板的制造方法，光掩模和使用光掩模的曝光方法
- 专利标题： Photomask substrate, photomask substrate forming member, photomask substrate fabricating method, photomask, and exposing method that uses the photomask
- 专利标题（中）： 光掩模基板，光掩模基板形成部件，光掩模基板的制造方法，光掩模和使用光掩模的曝光方法
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申请号： US12591121申请日： 2009-11-09
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公开(公告)号： US08153336B2公开(公告)日： 2012-04-10
- 发明人: Tetsuya Abe , Yuhei Nitta , Yukiyasu Kimura
- 申请人： Tetsuya Abe , Yuhei Nitta , Yukiyasu Kimura
- 申请人地址： JP Tokyo
- 专利权人： Nikon Corporation
- 当前专利权人： Nikon Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Staas & Halsey LLP
- 优先权： JPP2007-124126 20070509
- 主分类号： G03F1/00
- IPC分类号： G03F1/00
摘要：
A photomask substrate with a substantially uniform thickness comprises: a first surface, which is a continuous curved surface whereon a mask pattern is to be formed; and a second surface. The first surface exhibits a square shape that comprises an opposing pair of first set sides and an opposing pair of second set sides and has support parts at end parts along the first set sides. When the photomask substrate is held such that the first surface is in a substantially vertical state, a reference plane that is parallel to a tangential plane of the first surface at the center point of the first surface is defined on the photomask substrate side that is closer to the first surface than to the second surface. At this time, a first distance in the thickness direction between the reference plane and the center point of the first surface is shorter than second distances in the thickness direction between the reference plane and the midpoints of the second set sides.
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