发明授权
- 专利标题： Nonvolatile semiconductor memory apparatus
- 专利标题（中）： 非易失性半导体存储装置
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申请号： US12403493申请日： 2009-03-13
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公开(公告)号： US08154072B2公开(公告)日： 2012-04-10
- 发明人: Masahiro Koike , Yuichiro Mitani , Tatsuo Shimizu , Naoki Yasuda , Yasushi Nakasaki , Akira Nishiyama
- 申请人： Masahiro Koike , Yuichiro Mitani , Tatsuo Shimizu , Naoki Yasuda , Yasushi Nakasaki , Akira Nishiyama
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2008-227418 20080904
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.
公开/授权文献
- US20100052035A1 NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS 公开/授权日：2010-03-04
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