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    Nonvolatile semiconductor memory apparatus
    1.
    发明授权
    Nonvolatile semiconductor memory apparatus 有权
    非易失性半导体存储装置

    公开(公告)号：US08154072B2

    公开(公告)日：2012-04-10

    申请号：US12403493

    申请日：2009-03-13

    申请人： Masahiro Koike ,  Yuichiro Mitani ,  Tatsuo Shimizu ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Akira Nishiyama

    发明人： Masahiro Koike ,  Yuichiro Mitani ,  Tatsuo Shimizu ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Akira Nishiyama

    IPC分类号： H01L29/788

    CPC分类号： H01L29/7881 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11521 ,  H01L29/513

    摘要： A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.

    摘要翻译： 一种非易失性半导体存储器件，包括：在半导体层中形成为彼此间隔一定距离的源区和漏区; 形成在位于源极区域和漏极区域之间的半导体层上的第一绝缘膜，所述第一绝缘膜包括形成在所述第一绝缘层上并具有比所述第一绝缘层高的介电常数的第一绝缘层和第二绝缘层 所述第二绝缘层具有进行孔捕获和释放的第一部位，所述第一部位通过将不同于基材的元素添加到所述第二绝缘膜而形成，所述第一部位位于比所述第二绝缘膜的费米能级更低的水平 形成半导体层的材料; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。

    NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS
    2.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS 有权
    非易失性半导体存储器件

    公开(公告)号：US20100052035A1

    公开(公告)日：2010-03-04

    申请号：US12403493

    申请日：2009-03-13

    申请人： Masahiro KOIKE ,  Yuichiro Mitani ,  Tatsuo Shimizu ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Akira Nishiyama

    发明人： Masahiro KOIKE ,  Yuichiro Mitani ,  Tatsuo Shimizu ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Akira Nishiyama

    IPC分类号： H01L29/788 ,  H01L29/792

    CPC分类号： H01L29/7881 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11521 ,  H01L29/513

    摘要： A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.

    摘要翻译： 一种非易失性半导体存储器件，包括：在半导体层中形成为彼此间隔一定距离的源区和漏区; 形成在位于源极区域和漏极区域之间的半导体层上的第一绝缘膜，所述第一绝缘膜包括形成在所述第一绝缘层上并具有比所述第一绝缘层高的介电常数的第一绝缘层和第二绝缘层 所述第二绝缘层具有进行孔捕获和释放的第一部位，所述第一部位通过将不同于基材的元素添加到所述第二绝缘膜而形成，所述第一部位位于比所述第二绝缘膜的费米能级更低的水平 形成半导体层的材料; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。

    Non-volatile semiconductor memory device and method of manufacturing the same
    3.
    发明授权
    Non-volatile semiconductor memory device and method of manufacturing the same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US08217444B2

    公开(公告)日：2012-07-10

    申请号：US13194099

    申请日：2011-07-29

    申请人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

    发明人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

    IPC分类号： H01L29/788

    CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/7881

    摘要： A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first gate insulating layer, a second gate insulating layer formed on the first charge trapping layer, and a controlling electrode formed on the second gate insulating layer. The first charge trapping layer includes an insulating film containing Al and O as major elements and having a defect pair formed of a complex of an interstitial O atom and a tetravalent cationic atom substituting for an Al atom, the insulating film also having electron unoccupied levels within the range of 2 eV-6 eV as measured from the valence band maximum of Al2O3.

    摘要翻译： 一种能够电写入，擦除，读取和保留数据的MONOS型非易失性半导体存储器件，所述存储器件包括源极/漏极区，第一栅极绝缘层，形成在第一栅极绝缘层上的第一电荷俘获层 形成在第一电荷俘获层上的第二栅极绝缘层，以及形成在第二栅极绝缘层上的控制电极。 第一电荷俘获层包括含有Al和O作为主要元素并且具有由间隙O原子和四价阳离子原子的复合物形成的缺陷对的绝缘膜，代替Al原子，绝缘膜还具有电子未占有的含量 从Al2O3的价带最大值测量的2eV-6eV的范围。

    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    非挥发性半导体存储器件及其制造方法

    公开(公告)号：US20090078983A1

    公开(公告)日：2009-03-26

    申请号：US12212128

    申请日：2008-09-17

    申请人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

    发明人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

    IPC分类号： H01L29/788 ,  H01L29/792

    CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/7881

    摘要： A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first gate insulating layer, a second gate insulating layer formed on the first charge trapping layer, and a controlling electrode formed on the second gate insulating layer. The first charge trapping layer includes an insulating film containing Al and O as major elements and having a defect pair formed of a complex of an interstitial O atom and a tetravalent cationic atom substituting for an Al atom, the insulating film also having electron unoccupied levels within the range of 2 eV-6 eV as measured from the valence band maximum of Al2O3.

    摘要翻译： 一种能够电写入，擦除，读取和保留数据的MONOS型非易失性半导体存储器件，所述存储器件包括源极/漏极区，第一栅极绝缘层，形成在第一栅极绝缘层上的第一电荷俘获层 形成在第一电荷俘获层上的第二栅极绝缘层，以及形成在第二栅极绝缘层上的控制电极。 第一电荷俘获层包括含有Al和O作为主要元素并且具有由间隙O原子和四价阳离子原子的复合物形成的缺陷对的绝缘膜，代替Al原子，绝缘膜还具有电子未占有的含量 从Al2O3的价带最大值测量的2eV-6eV的范围。

    Non-volatile semiconductor memory device and method of manufacturing the same
    7.
    发明授权
    Non-volatile semiconductor memory device and method of manufacturing the same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US08013380B2

    公开(公告)日：2011-09-06

    申请号：US12212128

    申请日：2008-09-17

    申请人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

    发明人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

    IPC分类号： H01L29/788

    CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/7881

    摘要： A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first gate insulating layer, a second gate insulating layer formed on the first charge trapping layer, and a controlling electrode formed on the second gate insulating layer. The first charge trapping layer includes an insulating film containing Al and O as major elements and having a defect pair formed of a complex of an interstitial O atom and a tetravalent cationic atom substituting for an Al atom, the insulating film also having electron unoccupied levels within the range of 2 eV-6 eV as measured from the valence band maximum of Al2O3.

    摘要翻译： 一种能够电写入，擦除，读取和保留数据的MONOS型非易失性半导体存储器件，所述存储器件包括源极/漏极区，第一栅极绝缘层，形成在第一栅极绝缘层上的第一电荷俘获层 形成在第一电荷俘获层上的第二栅极绝缘层，以及形成在第二栅极绝缘层上的控制电极。 第一电荷俘获层包括含有Al和O作为主要元素并且具有由间隙O原子和四价阳离子原子的复合物形成的缺陷对的绝缘膜，代替Al原子，绝缘膜还具有电子未占有的含量 从Al2O3的价带最大值测量的2eV-6eV的范围。

    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    非挥发性半导体存储器件及其制造方法

    公开(公告)号：US20120256249A1

    公开(公告)日：2012-10-11

    申请号：US13527813

    申请日：2012-06-20

    申请人： Yasushi NAKASAKI ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

    发明人： Yasushi NAKASAKI ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

    IPC分类号： H01L29/792

    CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/7881

    摘要： A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first gate insulating layer, a second gate insulating layer formed on the first charge trapping layer, and a controlling electrode formed on the second gate insulating layer. The first charge trapping layer includes an insulating film containing Al and O as major elements and having a defect pair formed of a complex of an interstitial O atom and a tetravalent cationic atom substituting for an Al atom, the insulating film also having electron unoccupied levels within the range of 2 eV-6 eV as measured from the valence band maximum of Al2O3.

    摘要翻译： 一种能够电写入，擦除，读取和保留数据的MONOS型非易失性半导体存储器件，所述存储器件包括源极/漏极区，第一栅极绝缘层，形成在第一栅极绝缘层上的第一电荷俘获层 形成在第一电荷俘获层上的第二栅极绝缘层，以及形成在第二栅极绝缘层上的控制电极。 第一电荷俘获层包括含有Al和O作为主要元素并且具有由间隙O原子和四价阳离子原子的复合物形成的缺陷对的绝缘膜，代替Al原子，绝缘膜还具有电子未占有的含量 从Al2O3的价带最大值测量的2eV-6eV的范围。

    Nonvolatile semiconductor memory apparatus
    10.
    发明授权
    Nonvolatile semiconductor memory apparatus 有权
    非易失性半导体存储装置

    公开(公告)号：US08698313B2

    公开(公告)日：2014-04-15

    申请号：US13457054

    申请日：2012-04-26

    申请人： Izumi Hirano ,  Shosuke Fujii ,  Yuichiro Mitani ,  Naoki Yasuda

    发明人： Izumi Hirano ,  Shosuke Fujii ,  Yuichiro Mitani ,  Naoki Yasuda

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/513

    摘要： A nonvolatile semiconductor memory apparatus according to an embodiment includes: a semiconductor layer; a first insulating film formed on the semiconductor layer, the first insulating film being a single-layer film containing silicon oxide or silicon oxynitride; a charge trapping film formed on the first insulating film; a second insulating film formed on the charge trapping film; and a control gate electrode formed on the second insulating film. A metal oxide exists in an interface between the first insulating film and the charge trapping film, the metal oxide comprises material which is selected from the group of Al2O3, HfO2, ZrO2, TiO2, and MgO, the material is stoichiometric composition, and the charge trapping film includes material different from the material of the metal oxide.

    摘要翻译： 根据实施例的非易失性半导体存储装置包括：半导体层; 形成在所述半导体层上的第一绝缘膜，所述第一绝缘膜是含有氧化硅或氮氧化硅的单层膜; 形成在第一绝缘膜上的电荷捕获膜; 形成在电荷捕获膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。 金属氧化物存在于第一绝缘膜和电荷捕获膜之间的界面中，金属氧化物包括选自Al 2 O 3，HfO 2，ZrO 2，TiO 2和MgO的材料，该材料为化学计量组成，并且电荷 捕获膜包括与金属氧化物的材料不同的材料。