- 专利标题: Metal high dielectric constant transistor with reverse-T gate
-
申请号: US12543692申请日: 2009-08-19
-
公开(公告)号: US08159028B2公开(公告)日: 2012-04-17
- 发明人: Leland Chang , Isaac Lauer , Jeffrey W. Sleight
- 申请人: Leland Chang , Isaac Lauer , Jeffrey W. Sleight
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Fleit Gibbons Gutman Bongini & Bianco PL
- 代理商 Stephen Bongini
- 主分类号: H01L29/72
- IPC分类号: H01L29/72
摘要:
A transistor is provided. The transistor includes a silicon layer including a source region and a drain region. A gate stack is disposed on the silicon layer between the source region and the drain region. The gate stack comprises a first layer of a high dielectric constant material, a second layer comprising a metal or metal alloy, and a third layer comprising silicon or polysilicon. A lateral extent of the second layer of the gate stack is substantially greater than a lateral extent of the third layer of the gate stack. Also provided are methods for fabricating such a transistor.