发明授权
US08164121B2 Charge coupled device with potential gradient region between two control gate regions
有权
电荷耦合器件具有两个控制栅极区域之间的电位梯度区域
- 专利标题: Charge coupled device with potential gradient region between two control gate regions
- 专利标题(中): 电荷耦合器件具有两个控制栅极区域之间的电位梯度区域
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申请号: US12780708申请日: 2010-05-14
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公开(公告)号: US08164121B2公开(公告)日: 2012-04-24
- 发明人: Mark Wadsworth
- 申请人: Mark Wadsworth
- 申请人地址: US CA Irvine
- 专利权人: Imagerlabs
- 当前专利权人: Imagerlabs
- 当前专利权人地址: US CA Irvine
- 代理机构: Haynes and Boone LLP
- 主分类号: H01L27/148
- IPC分类号: H01L27/148
摘要:
A six-phase charge coupled device (CCD) pixel includes a pixel pair, with each pixel having two adjacent control gates overlying corresponding variable potential wells, where voltages applied to the control gates enable charge to be accumulated into and transferred out of the wells. A clear window region overlies a fixed potential gradient region, decreasing in potential away from the control gates. This region enables a wide band of photons to be sensed by the photosensitive silicon of the CCD. The decreasing potential levels facilitate high charge transfer efficiency (i.e., high CTE) from pixel to pixel via the control or transfer gates. By applying particular voltages to the control gates, charge can be quickly and efficiently transferred between pixels. In addition, the window provides a self aligned mask for the implantation steps and thus prevents the formation of pockets (or wells) due to misalignments that decrease the charge transfer efficiency and causes non-uniformity problems as associated with prior art. Furthermore the window provides a flat region that can be covered with an anti-reflective (AR) coating layer, thus further increasing the quantum efficiency.
公开/授权文献
- US20100258847A1 Charge Coupled Device With High Quantum Efficiency 公开/授权日:2010-10-14
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