Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
- Patent Title (中): 基板处理方法和基板处理装置
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Application No.: US12363992Application Date: 2009-02-02
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Publication No.: US08178444B2Publication Date: 2012-05-15
- Inventor: Chishio Koshimizu , Taichi Hirano , Masanobu Honda , Shinji Himori
- Applicant: Chishio Koshimizu , Taichi Hirano , Masanobu Honda , Shinji Himori
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-026371 20080206
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/302
Abstract:
A substrate processing method that can eliminate unevenness in the distribution of plasma. The method is for a substrate processing apparatus that has a processing chamber in which a substrate is housed, a mounting stage that is disposed in the processing chamber and on which the substrate is mounted, and an electrode plate that is disposed in the processing chamber such as to face the mounting stage, the electrode plate being made of silicon and connected to a radio-frequency power source, and carries out plasma processing on the substrate. In the plasma processing, the temperature of the electrode plate is measured, and based on the measured temperature, the temperature of the electrode plate is maintained lower than a critical temperature at which the specific resistance value of the silicon starts changing.
Public/Granted literature
- US20090197423A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2009-08-06
Information query
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