发明授权
US08178907B2 Nanoscopic wire-based electrical crossbar memory-devices and arrays
有权
纳米线基电子交叉开关存储器件和阵列
- 专利标题： Nanoscopic wire-based electrical crossbar memory-devices and arrays
- 专利标题（中）： 纳米线基电子交叉开关存储器件和阵列
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申请号： US10812653申请日： 2004-03-29
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公开(公告)号： US08178907B2公开(公告)日： 2012-05-15
- 发明人: Charles M. Lieber , Thomas Rueckes , Ernesto Joselevich , Kevin Kim
- 申请人： Charles M. Lieber , Thomas Rueckes , Ernesto Joselevich , Kevin Kim
- 申请人地址： US MA Cambridge
- 专利权人： President and Fellows of Harvard College
- 当前专利权人： President and Fellows of Harvard College
- 当前专利权人地址： US MA Cambridge
- 代理机构： Wolf, Greenfield & Sacks, P.C.
- 主分类号： H01L27/10
- IPC分类号： H01L27/10
摘要：
Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
公开/授权文献
- US20040188721A1 Nanoscopic wired-based devices and arrays 公开/授权日：2004-09-30
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