公开(公告)号：US08399339B2

公开(公告)日：2013-03-19

申请号：US13083817

申请日：2011-04-11

申请人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

发明人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

IPC分类号： H01L21/203 ,  H01L21/66

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G01N2610/00 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/81 ,  H01L23/53276 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1606 ,  H01L29/207 ,  H01L29/267 ,  H01L51/0048 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10S977/762 ,  Y10S977/957 ,  H01L2924/00

摘要： Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized Nanodetector devices are described.

摘要翻译： 描述了由纳米线构成的电气装置及其制造和使用的方法。 纳米线可以是纳米管和纳米线。 纳米线的表面可以被选择性地官能化。描述了纳米检测器器件。

公开(公告)号：US20120267604A1

公开(公告)日：2012-10-25

申请号：US13497852

申请日：2010-09-24

申请人： Bozhi Tian ,  Ping Xie ,  Thomas J. Kempa ,  Charles M. Lieber ,  Itzhaq Cohen-Karni ,  Quan Qing ,  Xiaojie Duan

发明人： Bozhi Tian ,  Ping Xie ,  Thomas J. Kempa ,  Charles M. Lieber ,  Itzhaq Cohen-Karni ,  Quan Qing ,  Xiaojie Duan

IPC分类号： H01L29/06 ,  H01L21/20 ,  B82Y99/00

CPC分类号： G01N27/4146 ,  B82Y10/00 ,  B82Y15/00 ,  G01N33/48728 ,  H01L21/02603 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0669 ,  H01L51/0048

摘要： Kinked nanowires are used for measuring electrical potentials inside simple cells. An improved intracellular entrance is achieved by modifying the kinked nanowires with phospholipids.

摘要翻译： 扭曲的纳米线用于测量简单电池内的电位。 改进的细胞内入口通过用磷脂修饰扭结的纳米线来实现。

公开(公告)号：US20110042641A1

公开(公告)日：2011-02-24

申请号：US12310764

申请日：2007-09-11

申请人： Charles M. Lieber ,  Bozhi Tian ,  Xiaocheng Jiang

发明人： Charles M. Lieber ,  Bozhi Tian ,  Xiaocheng Jiang

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： B82Y30/00 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02645

摘要： The present invention generally relates to nanotechnology and, in particular, to branched nanoscale wires cases, the branched nanoscale wires may be produced using vapor-phase and/or solution-phase synthesis. Branched nanoscale wires may be grown by depositing nanoparticles onto a nanoscale wire, and segments or “branches” can then be grown from the nanoparticles. The nanoscale wire may be any nanoscale wire, for example, a semiconductor nanoscale wire, a nanoscale wire having a core and a shell. The segments may be of the same, or of different materials, than the nanoscale wire, for example, semiconductor/metal, semiconductor/semiconductor. The junction between the segment and the nanoscale wire, in some cases, is epitaxial. In one embodiment, the nanoparticles are adsorbed onto the nanoscale wire by immobilizing a positively-charged entity, such as polylysine, to the nanoscale wire, and exposing it to the nanoparticles. In another embodiment, nanoparticles are deposited onto a nanoscale wire by etching the nanoscale wire to produce an H-terminated surface, then exposing the surface to a solution comprising a metal ion, which be reduced by the surface to form nanoparticles. Segments or branches can then be grown from the deposited nanoparticles to the branched nanoscale wire.

摘要翻译： 本发明一般涉及纳米技术，特别是涉及支化纳米线材的情况，可以使用气相和/或溶液相合成制备支链纳米线。 可以通过将纳米尺寸的纳米线沉积到纳米线上来生长分支的纳米线，然后可以从纳米颗粒生长片段或“分​​支”。 纳米线可以是任何纳米尺寸的线，例如半导体纳米级线，具有芯和壳的纳米线。 这些片段可以与纳米尺寸线材（例如半导体/金属，半导体/半导体）相同或不同的材料。 在一些情况下，段和纳米线之间的接合是外延的。 在一个实施方案中，通过将带正电荷的实体（例如聚赖氨酸）固定到纳米线上并将其暴露于纳米颗粒，将纳米颗粒吸附到纳米级线上。 在另一个实施方案中，通过蚀刻纳米尺度线以产生H终止的表面，然后将表面暴露于包含金属离子的溶液中，将纳米颗粒沉积到纳米级线上，所述溶液由表面还原以形成纳米颗粒。 然后可以将片段或分支从沉积的纳米颗粒生长成分支的纳米线。

公开(公告)号：US20100093158A1

公开(公告)日：2010-04-15

申请号：US11543353

申请日：2006-10-04

申请人： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

发明人： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC分类号： H01L21/208 ,  H01L21/368

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

公开(公告)号：US20100087013A1

公开(公告)日：2010-04-08

申请号：US12308207

申请日：2007-06-11

申请人： Charles M. Lieber ,  Ying Fang ,  Fernando Patolsky

发明人： Charles M. Lieber ,  Ying Fang ,  Fernando Patolsky

IPC分类号： G01N33/551 ,  H01L21/38 ,  G01N33/553

CPC分类号： G01N33/551 ,  B82Y10/00 ,  C12Q1/6825 ,  C12Q2600/156 ,  G01N27/4145 ,  G01N27/4146 ,  G01N33/553 ,  H01L51/0049 ,  H01L51/0093 ,  C12Q2563/155

摘要： The present invention generally relates to nanotechnology and sub-microelectronic circuitry, as well as associated methods and devices, for example, nanoscale wire devices and methods for use in determining nucleic acids or other analytes suspected to be present in a sample (for example, their presence and/or dynamical information), e.g., at the single molecule level. For example, a nanoscale wire device can be used in some cases to detect single base mismatches within a nucleic acid (e.g., by determining association and/or dissociation rates). In one aspect, dynamical information such as a binding constant, an association rate, and/or a dissociation rate, can be determined between a nucleic acid or other analyte, and a binding partner immobilized relative to a nanoscale wire. In some cases, the nanoscale wire includes a first portion comprising a metal-semiconductor compound, and a second portion that does not include a metal-semiconductor compound. The binding partner, in some embodiments, is immobilized relative to at least the second portion of the nanoscale wire, and the size of the second portion of the nanoscale wire may be minimized and/or controlled in some instances. Articles and devices of size greater than the nanoscale are also included in certain embodiments. Still other aspects of the invention include assays, sensors, kits, and/or other devices that include such nanoscale wires, methods of making and/or using such nanoscale wires, or the like.

摘要翻译： 本发明通常涉及纳米技术和亚微电子电路，以及相关的方法和装置，例如纳米级线器件和用于确定疑似存在于样品中的核酸或其他分析物的方法（例如，它们的 存在和/或动态信息），例如在单分子水平。 例如，在一些情况下可以使用纳米级线器件来检测核酸内的单碱基错配（例如，通过确定缔合和/或解离速率）。 在一个方面，可以在核酸或其他分析物与相对于纳米尺度线固定的结合对象之间确定动力学信息，例如结合常数，缔合速率和/或解离速率。 在一些情况下，纳米尺寸线包括包含金属 - 半导体化合物的第一部分和不包括金属 - 半导体化合物的第二部分。 在一些实施方案中，结合配偶体相对于纳米尺度线的至少第二部分是固定的，并且纳米级线的第二部分的尺寸可以在一些情况下被最小化和/或控制。 尺寸大于纳米尺寸的制品和装置也包括在某些实施方案中。 本发明的其它方面包括测定，传感器，试剂盒和/或包括这种纳米线的其它装置，制造和/或使用这种纳米级线的方法等。

公开(公告)号：US20090299213A1

公开(公告)日：2009-12-03

申请号：US12225142

申请日：2007-03-15

申请人： Fernando Patolsky ,  Brian P. Timko ,  Guihua Yu ,  Charles M. Lieber

发明人： Fernando Patolsky ,  Brian P. Timko ,  Guihua Yu ,  Charles M. Lieber

IPC分类号： A61B5/05 ,  H01L29/66

CPC分类号： G01N33/5058 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606

摘要： The present invention generally relates to nanobioelectronics and, in some cases, to circuits comprising nanoelectronic elements, such as nanotubes and/or nanowires, and biological components, such as neurons. In one aspect, cells, such as neurons, are positioned in electrical communication with one or more nanoscale wires. The nanoscale wires may be used to stimulate the cells, and/or determine an electrical condition of the cells. More than one nanoscale wire may be positioned in electrical communication with the cell, for example, in distinct regions of the cell. However, the nanoscale wires may be positioned such that they are relatively close together, for example, spaced apart by no more than about 200 nm. The nanoscale wires may be disposed on a substrate, for example, between electrodes, and the cells may be adhered to the substrate, for example, using cell adhesion factors such as polylysine. Also provided in other aspects of the invention are methods for making and using such devices, kits for using the same, and the like.

摘要翻译： 本发明通常涉及纳米电子学，并且在一些情况下涉及包括纳米电子元件（例如纳米管和/或纳米线）以及生物组分（诸如神经元）的电路。 在一个方面，诸如神经元的细胞被定位成与一个或多个纳米尺度线电连通。 纳米线可用于刺激细胞，和/或确定细胞的电气状态。 可以将多于一个的纳米级导线定位成与电池电连通，例如在电池的不同区域中。 然而，纳米级线可以被定位成使得它们相对靠近在一起，例如间隔开不超过约200nm。 纳米线可以设置在例如电极之间的基板上，并且可以使用诸如聚赖氨酸之类的细胞粘附因子将细胞粘附到基底上。 在本发明的其他方面中还提供了制造和使用这种装置的方法，用于使用它们的试剂盒等。

公开(公告)号：US07619290B2

公开(公告)日：2009-11-17

申请号：US12038794

申请日：2008-02-27

申请人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

发明人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

IPC分类号： H01L27/14 ,  H01L29/82 ,  H01L29/84

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G01N2610/00 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/81 ,  H01L23/53276 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1606 ,  H01L29/207 ,  H01L29/267 ,  H01L51/0048 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10S977/762 ,  Y10S977/957 ,  H01L2924/00

摘要： Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

公开(公告)号：US20080254291A1

公开(公告)日：2008-10-16

申请号：US11883679

申请日：2006-02-02

申请人： Andre Dehon ,  Charles M. Lieber ,  John E. Savage ,  Eric Rachlin

发明人： Andre Dehon ,  Charles M. Lieber ,  John E. Savage ,  Eric Rachlin

IPC分类号： B32B5/22 ,  C23F1/02

CPC分类号： H01L27/10 ,  B82Y10/00 ,  G11C2213/18 ,  G11C2213/81 ,  H03K19/177 ,  H03K19/1778 ,  Y10T428/2958

摘要： Disclosed is a method to construct a device that includes a plurality of nanowires (NWs) each having a core and at least one shell. The method includes providing a plurality of radially encoded NWs where each shell contains one of a plurality of different shell materials; and differentiating individual ones of the NWs from one another by selectively removing or not removing shell material within areas to be electrically coupled to individual ones of a plurality of mesowires (MWs). Also disclosed is a nanowire array that contains radially encoded NWs, and a computer program product useful in forming a nanowire array.

摘要翻译： 公开了一种构建包括多个纳米线（NW）的装置的方法，每个纳米线具有芯部和至少一个壳体。 该方法包括提供多个径向编码的NW，其中每个壳包含多个不同的壳材料之一; 并且通过选择性地去除或不去除要电耦合到多个介质（MW）中的各个的区域的区域内的壳体材料来区分NW中的各个。 还公开了包含径向编码的NW的纳米线阵列和用于形成纳米线阵列的计算机程序产品。

公开(公告)号：US07301199B2

公开(公告)日：2007-11-27

申请号：US10196337

申请日：2002-07-16

申请人： Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

发明人： Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L29/06

CPC分类号： G11C13/025 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  C30B11/00 ,  C30B25/00 ,  C30B25/005 ,  C30B29/60 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C11/56 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/18 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02603 ,  H01L21/02617 ,  H01L21/02628 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L27/092 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/267 ,  H01L29/73 ,  H01L29/7781 ,  H01L29/78696 ,  H01L29/861 ,  H01L29/868 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L51/0048 ,  H01L51/0595 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y02E10/549 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/958 ,  Y10T428/2929 ,  Y10T428/298 ,  H01L2924/00

摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

摘要翻译： 本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。 在一些情况下，制品可以是单晶。 纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。 这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。 描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。 例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。

公开(公告)号：US07254151B2

公开(公告)日：2007-08-07

申请号：US10734086

申请日：2003-12-11

申请人： Charles M. Lieber ,  Xiangfeng Duan ,  Yu Huang ,  Ritesh Agarwal

发明人： Charles M. Lieber ,  Xiangfeng Duan ,  Yu Huang ,  Ritesh Agarwal

IPC分类号： H01S5/00

CPC分类号： G11C13/025 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G11C2213/17 ,  G11C2213/18 ,  H01S5/021 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S5/341 ,  H01S5/343 ,  H01S5/347 ,  Y10S977/825 ,  Y10S977/951

摘要： This invention generally relates to nanotechnology and nanoelectronics as well as associated methods and devices. In particular, the invention relates to nanoscale optical components such as electroluminescence devices (e.g., LEDs), amplified stimulated emission devices (e.g., lasers), waveguides, and optical cavities (e.g., resonators). Articles and devices of a size greater than the nanoscale are also included. Such devices can be formed from nanoscale wires such as nanowires or nanotubes. In some cases, the nanoscale wire is a single crystal. In one embodiment, the nanoscale laser is constructed as a Fabry-Perot cavity, and is driven by electrical injection. Any electrical injection source may be used. For example, electrical injection may be accomplished through a crossed wire configuration, an electrode or distributed electrode configuration, or a core/shell configuration. The output wavelength can be controlled, for example, by varying the types of materials used to fabricate the device. One or more such nanoscale lasers may also be integrated with other nanoscale components within a device.

摘要翻译： 本发明一般涉及纳米技术和纳米电子学以及相关的方法和装置。 特别地，本发明涉及纳米尺度光学部件，例如电致发光器件（例如，LED），放大的受激发射器件（例如，激光器），波导和光学腔（例如谐振器）。 还包括尺寸大于纳米尺寸的物品和装置。 这样的器件可以由诸如纳米线或纳米管的纳米尺寸线形成。 在某些情况下，纳米线是单晶。 在一个实施例中，纳米级激光器被构造为法布里 - 珀罗腔，并且通过电注入驱动。 可以使用任何电喷射源。 例如，电注入可以通过交叉线配置，电极或分布电极配置或核/壳配置来实现。 可以例如通过改变用于制造器件的材料的类型来控制输出波长。 一个或多个这样的纳米尺度激光器也可以与器件内的其他纳米级组件集成。