Invention Grant
- Patent Title: Method of fabricating semiconductor substrate and method of fabricating light emitting device
- Patent Title (中): 制造半导体衬底的方法和制造发光器件的方法
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Application No.: US13137124Application Date: 2011-07-21
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Publication No.: US08183075B2Publication Date: 2012-05-22
- Inventor: Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
- Applicant: Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
- Applicant Address: KR Ansan-si
- Assignee: Seoul Opto Device Co., Ltd.
- Current Assignee: Seoul Opto Device Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2009-0079429 20090826; KR10-2009-0079431 20090826; KR10-2009-0079434 20090826; KR10-2009-0079436 20090826
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.
Public/Granted literature
- US20120021546A1 Method of fabricating semiconductor substrate and method of fabricating light emitting device Public/Granted day:2012-01-26
Information query
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