发明授权
US08183098B2 SOI device with contact trenches formed during epitaxial growing
有权
在外延生长期间形成接触沟槽的SOI器件
- 专利标题: SOI device with contact trenches formed during epitaxial growing
- 专利标题(中): 在外延生长期间形成接触沟槽的SOI器件
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申请号: US12610463申请日: 2009-11-02
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公开(公告)号: US08183098B2公开(公告)日: 2012-05-22
- 发明人: Pietro Montanini , Giuseppe Ammendola , Riccardo Depetro , Marta Mottura
- 申请人: Pietro Montanini , Giuseppe Ammendola , Riccardo Depetro , Marta Mottura
- 申请人地址: IT Agrate Brianza
- 专利权人: STMicroelectronics S.r.l.
- 当前专利权人: STMicroelectronics S.r.l.
- 当前专利权人地址: IT Agrate Brianza
- 代理机构: Wolf, Greenfield & Sacks, P.C.
- 优先权: EP06116123 20060627
- 主分类号: H01L21/762
- IPC分类号: H01L21/762
摘要:
A method for manufacturing an integrated electronic device. The method includes providing an SOI substrate having a semiconductor substrate, an insulating layer on the semiconductor substrate, and a semiconductor starting layer on the insulating layer; epitaxially growing the starting layer to obtain a semiconductor active layer on the insulating layer for integrating components of the device, and forming at least one contact trench extending from an exposed surface of the starting layer to the semiconductor substrate before the step of epitaxially growing the starting layer, wherein each contact trench clears a corresponding portion of the starting layer, of the insulating layer and of the semiconductor substrate, the epitaxial growing being further applied to the cleared portions thereby at least partially filling the at least one contact trench with semiconductor material.