公开(公告)号：US08183098B2

公开(公告)日：2012-05-22

申请号：US12610463

申请日：2009-11-02

申请人： Pietro Montanini ,  Giuseppe Ammendola ,  Riccardo Depetro ,  Marta Mottura

发明人： Pietro Montanini ,  Giuseppe Ammendola ,  Riccardo Depetro ,  Marta Mottura

IPC分类号： H01L21/762

CPC分类号： H01L21/84 ,  H01L21/26586 ,  H01L21/3226 ,  H01L21/76264 ,  H01L27/1207

摘要： A method for manufacturing an integrated electronic device. The method includes providing an SOI substrate having a semiconductor substrate, an insulating layer on the semiconductor substrate, and a semiconductor starting layer on the insulating layer; epitaxially growing the starting layer to obtain a semiconductor active layer on the insulating layer for integrating components of the device, and forming at least one contact trench extending from an exposed surface of the starting layer to the semiconductor substrate before the step of epitaxially growing the starting layer, wherein each contact trench clears a corresponding portion of the starting layer, of the insulating layer and of the semiconductor substrate, the epitaxial growing being further applied to the cleared portions thereby at least partially filling the at least one contact trench with semiconductor material.

摘要翻译： 一种集成电子装置的制造方法。 该方法包括提供具有半导体衬底的SOI衬底，半导体衬底上的绝缘层和绝缘层上的半导体起始层; 外延生长所述起始层以在所述绝缘层上获得用于积分所述器件的部件的半导体有源层，以及在所述起始层的外延生长步骤之前形成从所述起始层的暴露表面延伸到所述半导体衬底的至少一个接触沟槽 层，其中每个接触沟槽清除起始层，绝缘层和半导体衬底的相应部分，外延生长被进一步施加到清除部分，从而至少部分地用半导体材料填充至少一个接触沟槽。

公开(公告)号：US20100075484A1

公开(公告)日：2010-03-25

申请号：US12610463

申请日：2009-11-02

申请人： Pietro Montanini ,  Giuseppe Ammendola ,  Riccardo Depetro ,  Marta Mottura

发明人： Pietro Montanini ,  Giuseppe Ammendola ,  Riccardo Depetro ,  Marta Mottura

IPC分类号： H01L21/762

CPC分类号： H01L21/84 ,  H01L21/26586 ,  H01L21/3226 ,  H01L21/76264 ,  H01L27/1207

摘要： A method for manufacturing an integrated electronic device. The method includes providing an SOI substrate having a semiconductor substrate, an insulating layer on the semiconductor substrate, and a semiconductor starting layer on the insulating layer; epitaxially growing the starting layer to obtain a semiconductor active layer on the insulating layer for integrating components of the device, and forming at least one contact trench extending from an exposed surface of the starting layer to the semiconductor substrate before the step of epitaxially growing the starting layer, wherein each contact trench clears a corresponding portion of the starting layer, of the insulating layer and of the semiconductor substrate, the epitaxial growing being further applied to the cleared portions thereby at least partially filling the at least one contact trench with semiconductor material.

摘要翻译： 一种集成电子装置的制造方法。 该方法包括提供具有半导体衬底的SOI衬底，半导体衬底上的绝缘层和绝缘层上的半导体起始层; 外延生长所述起始层以在所述绝缘层上获得用于积分所述器件的部件的半导体有源层，以及在所述起始层的外延生长步骤之前形成从所述起始层的暴露表面延伸到所述半导体衬底的至少一个接触沟槽 层，其中每个接触沟槽清除起始层，绝缘层和半导体衬底的相应部分，外延生长被进一步施加到清除部分，从而至少部分地用半导体材料填充至少一个接触沟槽。

公开(公告)号：US20070296036A1

公开(公告)日：2007-12-27

申请号：US11820393

申请日：2007-06-19

申请人： Pietro Montanini ,  Giuseppe Ammendola ,  Riccardo Depetro ,  Marta Mottura

发明人： Pietro Montanini ,  Giuseppe Ammendola ,  Riccardo Depetro ,  Marta Mottura

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L21/84 ,  H01L21/26586 ,  H01L21/3226 ,  H01L21/76264 ,  H01L27/1207

摘要： A method for manufacturing an integrated electronic device. The method includes providing an SOI substrate having a semiconductor substrate, an insulating layer on the semiconductor substrate, and a semiconductor starting layer on the insulating layer; epitaxially growing the starting layer to obtain a semiconductor active layer on the insulating layer for integrating components of the device, and forming at least one contact trench extending from an exposed surface of the starting layer to the semiconductor substrate before the step of epitaxially growing the starting layer, wherein each contact trench clears a corresponding portion of the starting layer, of the insulating layer and of the semiconductor substrate, the epitaxial growing being further applied to the cleared portions thereby at least partially filling the at least one contact trench with semiconductor material.

摘要翻译： 一种集成电子装置的制造方法。 该方法包括提供具有半导体衬底的SOI衬底，半导体衬底上的绝缘层和绝缘层上的半导体起始层; 外延生长所述起始层以在所述绝缘层上获得用于积分所述器件的部件的半导体有源层，以及在所述起始层的外延生长步骤之前形成从所述起始层的暴露表面延伸到所述半导体衬底的至少一个接触沟槽 层，其中每个接触沟槽清除起始层，绝缘层和半导体衬底的相应部分，外延生长被进一步施加到清除部分，从而至少部分地用半导体材料填充至少一个接触沟槽。

公开(公告)号：US07635896B2

公开(公告)日：2009-12-22

申请号：US11820393

申请日：2007-06-19

申请人： Pietro Montanini ,  Giuseppe Ammendola ,  Riccardo Depetro ,  Mottura Marta

发明人： Pietro Montanini ,  Giuseppe Ammendola ,  Riccardo Depetro ,  Mottura Marta

IPC分类号： H01L27/12

CPC分类号： H01L21/84 ,  H01L21/26586 ,  H01L21/3226 ,  H01L21/76264 ,  H01L27/1207

摘要： A method for manufacturing an integrated electronic device. The method includes providing an SOI substrate having a semiconductor substrate, an insulating layer on the semiconductor substrate, and a semiconductor starting layer on the insulating layer; epitaxially growing the starting layer to obtain a semiconductor active layer on the insulating layer for integrating components of the device, and forming at least one contact trench extending from an exposed surface of the starting layer to the semiconductor substrate before the step of epitaxially growing the starting layer, wherein each contact trench clears a corresponding portion of the starting layer, of the insulating layer and of the semiconductor substrate, the epitaxial growing being further applied to the cleared portions thereby at least partially filling the at least one contact trench with semiconductor material.

摘要翻译： 一种集成电子装置的制造方法。 该方法包括提供具有半导体衬底的SOI衬底，半导体衬底上的绝缘层和绝缘层上的半导体起始层; 外延生长所述起始层以在所述绝缘层上获得用于积分所述器件的部件的半导体有源层，以及在所述起始层的外延生长步骤之前形成从所述起始层的暴露表面延伸到所述半导体衬底的至少一个接触沟槽 层，其中每个接触沟槽清除起始层，绝缘层和半导体衬底的相应部分，外延生长被进一步施加到清除部分，从而至少部分地用半导体材料填充至少一个接触沟槽。