发明授权
- 专利标题： Plasma processing method
- 专利标题（中）： 等离子体处理方法
-
申请号： US13019093申请日： 2011-02-01
-
公开(公告)号： US08183165B2公开(公告)日： 2012-05-22
- 发明人: Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
- 申请人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2004-058945 20040303; JP2004-268236 20040915
- 主分类号： H01L21/318
- IPC分类号： H01L21/318
摘要：
According to the present invention,when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to from an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently,it is possible to improve quality of the oxynitride film, resulting in a reduced leadage current, an improved operating speed, and improved NBTI resistance.
公开/授权文献
- US20110124202A1 PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM 公开/授权日：2011-05-26
信息查询
IPC分类:
