公开(公告)号：US20110124202A1

公开(公告)日：2011-05-26

申请号：US13019093

申请日：2011-02-01

申请人： Seiji MATSUYAMA ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Hikaru Adachi ,  Koichi Takatsuki ,  Yoshihiro Sato

发明人： Seiji MATSUYAMA ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Hikaru Adachi ,  Koichi Takatsuki ,  Yoshihiro Sato

IPC分类号： H01L21/318

CPC分类号： C23C8/36 ,  H01J37/32192 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.

摘要翻译： 根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。 通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。 因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

公开(公告)号：US20070059944A1

公开(公告)日：2007-03-15

申请号：US11514236

申请日：2006-09-01

申请人： Seiji Matsuyama ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Hikaru Adachi ,  Koichi Takatsuki ,  Yoshihiro Sato

发明人： Seiji Matsuyama ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Hikaru Adachi ,  Koichi Takatsuki ,  Yoshihiro Sato

IPC分类号： H01L21/471

CPC分类号： C23C8/36 ,  H01J37/32192 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.

摘要翻译： 根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。 通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。 因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

公开(公告)号：US08183165B2

公开(公告)日：2012-05-22

申请号：US13019093

申请日：2011-02-01

申请人： Seiji Matsuyama ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Hikaru Adachi ,  Koichi Takatsuki ,  Yoshihiro Sato

发明人： Seiji Matsuyama ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Hikaru Adachi ,  Koichi Takatsuki ,  Yoshihiro Sato

IPC分类号： H01L21/318

CPC分类号： C23C8/36 ,  H01J37/32192 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

摘要： According to the present invention,when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to from an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently,it is possible to improve quality of the oxynitride film, resulting in a reduced leadage current, an improved operating speed, and improved NBTI resistance.

摘要翻译： 根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成有氧化膜的基板上，从而形成氮氧化物膜时，间歇地供给微波。 通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。 因此，可以提高氧氮化膜的质量，导致降低的引线电流，提高的工作速度和改善的NBTI电阻。

公开(公告)号：US07897518B2

公开(公告)日：2011-03-01

申请号：US12757802

申请日：2010-04-09

申请人： Seiji Matsuyama ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Hikaru Adachi ,  Koichi Takatsuki ,  Yoshihiro Sato

发明人： Seiji Matsuyama ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Hikaru Adachi ,  Koichi Takatsuki ,  Yoshihiro Sato

IPC分类号： H01L21/31

CPC分类号： C23C8/36 ,  H01J37/32192 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.

摘要翻译： 根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。 通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。 因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

公开(公告)号：US20100196627A1

公开(公告)日：2010-08-05

申请号：US12757802

申请日：2010-04-09

申请人： Seiji MATSUYAMA ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Hikaru Adachi ,  Koichi Takatsuki ,  Yoshihiro Sato

发明人： Seiji MATSUYAMA ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Hikaru Adachi ,  Koichi Takatsuki ,  Yoshihiro Sato

IPC分类号： C23C16/513 ,  C23C16/34

CPC分类号： C23C8/36 ,  H01J37/32192 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.

摘要翻译： 根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。 通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。 因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

公开(公告)号：US07723241B2

公开(公告)日：2010-05-25

申请号：US11514236

申请日：2006-09-01

申请人： Seiji Matsuyama ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Hikaru Adachi ,  Koichi Takatsuki ,  Yoshihiro Sato

发明人： Seiji Matsuyama ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Hikaru Adachi ,  Koichi Takatsuki ,  Yoshihiro Sato

IPC分类号： H01L21/31

CPC分类号： C23C8/36 ,  H01J37/32192 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.

摘要翻译： 根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。 通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。 因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

公开(公告)号：US08021987B2

公开(公告)日：2011-09-20

申请号：US12632131

申请日：2009-12-07

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

IPC分类号： H01L21/38 ,  H01L21/469

CPC分类号： H01L21/02112 ,  H01L21/0234 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L29/518 ,  H01L29/78

摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

摘要翻译： 通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。 通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

公开(公告)号：US20100096707A1

公开(公告)日：2010-04-22

申请号：US12647902

申请日：2009-12-28

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L21/022 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3165 ,  H01L21/3185 ,  Y10T428/12736 ,  Y10T428/12806

摘要： In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

摘要翻译： 在涉及在电子器件用基板上形成绝缘膜的工序中，通过进行两个以上的工序来形成绝缘膜，该步骤用于调整在同一操作中涉及的绝缘膜的特性 原理。 通过进行诸如清洁，氧化，氮化和薄膜厚度减少的处理，同时避免暴露在空气中，可以实现具有高清洁度的绝缘膜的形成。 此外，在相同的工作原理下进行关于形成绝缘膜的各种步骤可以实现设备形式的简化，并且可以以高效率形成具有优异性能的绝缘膜。

公开(公告)号：US20050176263A1

公开(公告)日：2005-08-11

申请号：US11068933

申请日：2005-03-02

申请人： Takuya Sugawara ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Seiji Matsuyama ,  Shigemi Murakawa ,  Yoshihide Tada

发明人： Takuya Sugawara ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Seiji Matsuyama ,  Shigemi Murakawa ,  Yoshihide Tada

IPC分类号： C23C16/40 ,  C23C16/56 ,  H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L29/51 ,  H01L21/469

CPC分类号： C23C16/56 ,  C23C16/401 ,  C23C16/402 ,  H01J37/3222 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/76826 ,  H01L21/76828 ,  H01L29/517 ,  H01L29/518

摘要： A process for producing an electronic device material of a high quality MOS-type semiconductor comprising an insulating layer and a semiconductor layer excellent in the electrical characteristic. The process includes: a step of CVD-treating a substrate to be processed comprising single-crystal silicon as a main component, to thereby form an insulating layer; and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots, to thereby modify the insulating film by using the thus generated plasma.

摘要翻译： 一种制造高品质MOS型半导体的电子器件材料的方法，包括绝缘层和电特性优异的半导体层。 该方法包括：将包含单晶硅作为主要成分的待处理衬底进行CVD处理，从而形成绝缘层; 以及通过经由具有多个狭缝的平面天线构件基于微波照射从处理气体产生的等离子体曝光被处理基板的步骤，由此通过使用由此产生的等离子体来修正绝缘膜 。

公开(公告)号：US07622402B2

公开(公告)日：2009-11-24

申请号：US10509371

申请日：2003-03-31

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

IPC分类号： H01L21/31

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L21/31645 ,  H01L21/31662 ,  H01L28/56 ,  H01L29/517 ,  H01L29/518

摘要： The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.

摘要翻译： 基于包含至少含氧原子气体的工艺气体，等离子体照射设置在电子器件基板上的绝缘膜的表面，从而在绝缘膜和电子器件基板之间的界面处形成下面的膜。 在绝缘膜和电子器件基板之间的界面处提供了良好的底层膜，从而使得这样形成的底膜能够提高绝缘膜的性能。