Invention Grant
US08183646B2 Field effect transistor with narrow bandgap source and drain regions and method of fabrication
有权
具有窄带隙源极和漏极区域的场效应晶体管及其制造方法
- Patent Title: Field effect transistor with narrow bandgap source and drain regions and method of fabrication
- Patent Title (中): 具有窄带隙源极和漏极区域的场效应晶体管及其制造方法
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Application No.: US13021640Application Date: 2011-02-04
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Publication No.: US08183646B2Publication Date: 2012-05-22
- Inventor: Robert S. Chau , Suman Datta , Jack Kavalieros , Justin K. Brask , Mark L. Doczy , Matthew Metz
- Applicant: Robert S. Chau , Suman Datta , Jack Kavalieros , Justin K. Brask , Mark L. Doczy , Matthew Metz
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L27/088
- IPC: H01L27/088
Abstract:
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.
Public/Granted literature
- US20110121393A1 FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGIONS AND METHOD OF FABRICATION Public/Granted day:2011-05-26
Information query
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