Invention Grant
- Patent Title: High-voltage impulse amplifier
- Patent Title (中): 高压脉冲放大器
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Application No.: US12922491Application Date: 2009-04-03
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Publication No.: US08183933B2Publication Date: 2012-05-22
- Inventor: Subrata Halder , Renfeng Jin , James C.M. Hwang
- Applicant: Subrata Halder , Renfeng Jin , James C.M. Hwang
- Applicant Address: US PA Bethlehem
- Assignee: Lehigh University
- Current Assignee: Lehigh University
- Current Assignee Address: US PA Bethlehem
- Agency: Duane Morris LLP
- International Application: PCT/US2009/039483 WO 20090403
- International Announcement: WO2009/146133 WO 20091203
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/24

Abstract:
A circuit includes a first transistor in a common-collector configuration and a heterojunction bipolar transistor (HBT) in a common-emitter configuration. The first transistor has a base coupled to an input node for receiving a pulsed signal. A collector of the first transistor is coupled to a first voltage source node. A base of the HBT is coupled to an emitter of the first transistor. A collector of the HBT is coupled to a second voltage source node configured to bias the HBT normally off. The HBT operating isothermally when the pulsed signal has a short-pulse width and a low duty cycle. The first transistor drives the HBT when the pulsed signal is received at the base of the first transistor to output an amplified pulsed signal at the collector of the HBT.
Public/Granted literature
- US20110006847A1 HIGH-VOLTAGE IMPULSE AMPLIFIER Public/Granted day:2011-01-13
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