High-voltage impulse amplifier
    1.
    发明授权
    High-voltage impulse amplifier 有权
    高压脉冲放大器

    公开(公告)号:US08183933B2

    公开(公告)日:2012-05-22

    申请号:US12922491

    申请日:2009-04-03

    IPC分类号: H03F3/04 H03F1/24

    摘要: A circuit includes a first transistor in a common-collector configuration and a heterojunction bipolar transistor (HBT) in a common-emitter configuration. The first transistor has a base coupled to an input node for receiving a pulsed signal. A collector of the first transistor is coupled to a first voltage source node. A base of the HBT is coupled to an emitter of the first transistor. A collector of the HBT is coupled to a second voltage source node configured to bias the HBT normally off. The HBT operating isothermally when the pulsed signal has a short-pulse width and a low duty cycle. The first transistor drives the HBT when the pulsed signal is received at the base of the first transistor to output an amplified pulsed signal at the collector of the HBT.

    摘要翻译: 电路包括共集电极配置的第一晶体管和共发射极配置中的异质结双极晶体管(HBT)。 第一晶体管具有耦合到输入节点的基极,用于接收脉冲信号。 第一晶体管的集电极耦合到第一电压源节点。 HBT的基极耦合到第一晶体管的发射极。 HBT的集电极耦合到被配置成正常关断HBT偏置的第二电压源节点。 当脉冲信号具有短脉冲宽度和低占空比时,HBT同时工作。 当在第一晶体管的基极处接收脉冲信号时,第一晶体管驱动HBT,以在HBT的集电极处输出放大的脉冲信号。

    HIGH-VOLTAGE IMPULSE AMPLIFIER
    2.
    发明申请
    HIGH-VOLTAGE IMPULSE AMPLIFIER 有权
    高压脉冲放大器

    公开(公告)号:US20110006847A1

    公开(公告)日:2011-01-13

    申请号:US12922491

    申请日:2009-04-03

    IPC分类号: H03F3/04

    摘要: A circuit includes a first transistor in a common-collector configuration and a heterojunction bipolar transistor (HBT) in a common-emitter configuration. The first transistor has a base coupled to an input node for receiving a pulsed signal. A collector of the first transistor is coupled to a first voltage source node. A base of the HBT is coupled to an emitter of the first transistor. A collector of the HBT is coupled to a second voltage source node configured to bias the HBT normally off. The HBT operating isothermally when the pulsed signal has a short-pulse width and a low duty cycle. The first transistor drives the HBT when the pulsed signal is received at the base of the first transistor to output an amplified pulsed signal at the collector of the HBT.

    摘要翻译: 电路包括共集电极配置的第一晶体管和共发射极配置中的异质结双极晶体管(HBT)。 第一晶体管具有耦合到输入节点的基极,用于接收脉冲信号。 第一晶体管的集电极耦合到第一电压源节点。 HBT的基极耦合到第一晶体管的发射极。 HBT的集电极耦合到被配置成正常关断HBT偏置的第二电压源节点。 当脉冲信号具有短脉冲宽度和低占空比时,HBT同时工作。 当在第一晶体管的基极处接收脉冲信号时,第一晶体管驱动HBT,以在HBT的集电极处输出放大的脉冲信号。