公开(公告)号：US06833606B2

公开(公告)日：2004-12-21

申请号：US10289684

申请日：2002-11-07

申请人： Hiroshi Nakamura ,  Ting Cheong Ang ,  Kian Siong Ang ,  Subrata Halder ,  Geok Ing Ng

发明人： Hiroshi Nakamura ,  Ting Cheong Ang ,  Kian Siong Ang ,  Subrata Halder ,  Geok Ing Ng

IPC分类号： H01L2706

CPC分类号： H01L27/0605 ,  H01L21/8252

摘要： In the present invention, a semiconductor device is formed which includes an MIM capacitor located on the upper surface of a heterostructure from which the emitter, base and collector sections of a nearby HBT are defined. In this way the capacitor and HBT share a substantially common structure, with the base and emitter electrodes of the HBT fashioned from the same metal layers as the upper and lower capacitor plates, respectively. Furthermore, as the insulator region of the capacitor is formed prior to definition of the HBT structure, the dielectric material used can be deposited by means of a plasma enhanced process, without damaging the HBT structure.

摘要翻译： 在本发明中，形成半导体器件，其包括位于异质结构的上表面上的MIM电容器，从其定义附近HBT的发射极，基极和集电极部分。 以这种方式，电容器和HBT分别具有基本上共同的结构，HBT的基极和发射极电极分别由与上部和下部电容器板相同的金属层制成。 此外，由于在定义HBT结构之前形成电容器的绝缘体区域，所以使用的电介质材料可以通过等离子体增强工艺沉积，而不会损坏HBT结构。

公开(公告)号：US20110006847A1

公开(公告)日：2011-01-13

申请号：US12922491

申请日：2009-04-03

申请人： Subrata Halder ,  Renfeng Jin ,  James C.M. Hwang

发明人： Subrata Halder ,  Renfeng Jin ,  James C.M. Hwang

IPC分类号： H03F3/04

CPC分类号： H03F3/3435 ,  H03F2200/408 ,  H03F2200/93 ,  H04B1/7174

摘要： A circuit includes a first transistor in a common-collector configuration and a heterojunction bipolar transistor (HBT) in a common-emitter configuration. The first transistor has a base coupled to an input node for receiving a pulsed signal. A collector of the first transistor is coupled to a first voltage source node. A base of the HBT is coupled to an emitter of the first transistor. A collector of the HBT is coupled to a second voltage source node configured to bias the HBT normally off. The HBT operating isothermally when the pulsed signal has a short-pulse width and a low duty cycle. The first transistor drives the HBT when the pulsed signal is received at the base of the first transistor to output an amplified pulsed signal at the collector of the HBT.

摘要翻译： 电路包括共集电极配置的第一晶体管和共发射极配置中的异质结双极晶体管（HBT）。 第一晶体管具有耦合到输入节点的基极，用于接收脉冲信号。 第一晶体管的集电极耦合到第一电压源节点。 HBT的基极耦合到第一晶体管的发射极。 HBT的集电极耦合到被配置成正常关断HBT偏置的第二电压源节点。 当脉冲信号具有短脉冲宽度和低占空比时，HBT同时工作。 当在第一晶体管的基极处接收脉冲信号时，第一晶体管驱动HBT，以在HBT的集电极处输出放大的脉冲信号。

公开(公告)号：US08183933B2

公开(公告)日：2012-05-22

申请号：US12922491

申请日：2009-04-03

申请人： Subrata Halder ,  Renfeng Jin ,  James C.M. Hwang

发明人： Subrata Halder ,  Renfeng Jin ,  James C.M. Hwang

IPC分类号： H03F3/04 ,  H03F1/24

CPC分类号： H03F3/3435 ,  H03F2200/408 ,  H03F2200/93 ,  H04B1/7174

摘要： A circuit includes a first transistor in a common-collector configuration and a heterojunction bipolar transistor (HBT) in a common-emitter configuration. The first transistor has a base coupled to an input node for receiving a pulsed signal. A collector of the first transistor is coupled to a first voltage source node. A base of the HBT is coupled to an emitter of the first transistor. A collector of the HBT is coupled to a second voltage source node configured to bias the HBT normally off. The HBT operating isothermally when the pulsed signal has a short-pulse width and a low duty cycle. The first transistor drives the HBT when the pulsed signal is received at the base of the first transistor to output an amplified pulsed signal at the collector of the HBT.

摘要翻译： 电路包括共集电极配置的第一晶体管和共发射极配置中的异质结双极晶体管（HBT）。 第一晶体管具有耦合到输入节点的基极，用于接收脉冲信号。 第一晶体管的集电极耦合到第一电压源节点。 HBT的基极耦合到第一晶体管的发射极。 HBT的集电极耦合到被配置成正常关断HBT偏置的第二电压源节点。 当脉冲信号具有短脉冲宽度和低占空比时，HBT同时工作。 当在第一晶体管的基极处接收脉冲信号时，第一晶体管驱动HBT，以在HBT的集电极处输出放大的脉冲信号。