Invention Grant
US08187909B2 Backside illuminated image sensor having deep light reflective trenches
有权
具有深光反射沟槽的背面照明图像传感器
- Patent Title: Backside illuminated image sensor having deep light reflective trenches
- Patent Title (中): 具有深光反射沟槽的背面照明图像传感器
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Application No.: US12853847Application Date: 2010-08-10
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Publication No.: US08187909B2Publication Date: 2012-05-29
- Inventor: Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
- Applicant: Vincent Venezia , Hsin-Chih Tai , Duli Mao , Sohei Manabe , Howard E. Rhodes , Wei Dong Qian
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
An array of pixels is formed using a semiconductor layer having a frontside and a backside through which incident light is received. Each pixel typically includes a photosensitive region formed in the semiconductor layer and a trench formed adjacent to the photosensitive region. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
Public/Granted literature
- US20100323470A1 BACKSIDE ILLUMINATED IMAGE SENSOR HAVING DEEP LIGHT REFLECTIVE TRENCHES Public/Granted day:2010-12-23
Information query
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