发明授权
- 专利标题: Method for manufacturing silicon single crystal wafer
- 专利标题(中): 硅单晶晶片的制造方法
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申请号: US12449200申请日: 2008-01-24
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公开(公告)号: US08187954B2公开(公告)日: 2012-05-29
- 发明人: Yoshinori Hayamizu , Hiroyasu Kikuchi
- 申请人: Yoshinori Hayamizu , Hiroyasu Kikuchi
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff & Berridge, PLC
- 优先权: JP2007-045956 20070226
- 国际申请: PCT/JP2008/000070 WO 20080124
- 国际公布: WO2008/105136 WO 20080904
- 主分类号: H01L21/322
- IPC分类号: H01L21/322
摘要:
The present invention provides a method for manufacturing a silicon single crystal wafer, in which a silicon single crystal wafer that is fabricated based on a Czochralski method and has an entire plane in a radial direction formed of an N region is subjected to a rapid thermal annealing in an oxidizing atmosphere, an oxide film formed in the rapid thermal annealing in the oxidizing atmosphere is removed, and then a rapid thermal annealing is carried out in a nitriding atmosphere, an Ar atmosphere, or a mixed atmosphere of these atmospheres. As a result, there can be provided the manufacturing method that can inexpensively manufacture a silicon single crystal wafer both in which a DZ layer is formed in a wafer surface layer to provide excellent device characteristics and in which an oxide precipitate functioning as a gettering site can be sufficiently formed in a bulk region.
公开/授权文献
- US20100105191A1 METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER 公开/授权日:2010-04-29