发明授权
- 专利标题： Methods of post-contact back end of line through-hole via integration
- 专利标题（中）： 通过一体化的后通孔后端的方法
-
申请号： US12613518申请日： 2009-11-05
-
公开(公告)号： US08187968B2公开(公告)日： 2012-05-29
- 发明人: John Boyd , Fritz Redeker , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
- 申请人： John Boyd , Fritz Redeker , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理商 Larry Williams
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Presented are methods of fabricating three-dimensional integrated circuits that include post-contact back end of line through-hole via integration for the three-dimensional integrated circuits. Another aspect of the present invention includes three-dimensional integrated circuits fabricated according to methods of the present invention.
公开/授权文献
信息查询
IPC分类:
