Diagnostic for Sepsis
    3.
    发明申请
    Diagnostic for Sepsis 审中-公开
    诊断脓毒症

    公开(公告)号:US20170073734A1

    公开(公告)日:2017-03-16

    申请号:US15124333

    申请日:2015-03-13

    IPC分类号: C12Q1/68 A61K35/15 C12N15/10

    摘要: A method of diagnosing severe sepsis prior to definitive clinical diagnosis. A pattern of gene expression that correlates strongly with a future diagnosis of severe sepsis and organ failure was identified in patients who had their blood drawn at first clinical presentation. The methods comprise identifying a pattern of two or more polynucleotides, whereby the altered expression of these polynucleotides correlates with prospective and actual sepsis. Also methods of identifying agents for treating sepsis based on the characteristics of this gene expression pattern are provided.

    摘要翻译: 在确定临床诊断前诊断严重脓毒症的方法。 在首次临床表现时抽取血液的患者中确定了与严重脓毒症和器官功能衰竭的未来诊断密切相关的基因表达模式。 所述方法包括鉴定两个或多个多核苷酸的模式,由此这些多核苷酸的改变的表达与预期和实际败血症相关。 还提供了基于该基因表达模式的特征鉴定用于治疗败血症的药剂的方法。

    Apparatus for the removal of a fluorinated polymer from a substrate
    4.
    发明授权
    Apparatus for the removal of a fluorinated polymer from a substrate 有权
    用于从基材除去氟化聚合物的装置

    公开(公告)号:US08926789B2

    公开(公告)日:2015-01-06

    申请号:US12750612

    申请日:2010-03-30

    CPC分类号: H01L21/02087 B08B7/0035

    摘要: An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.

    摘要翻译: 提供一种从衬底生成用于除去氟化聚合物的等离子体的装置。 所述装置包括电源电极组件,其包括供电电极,第一电介质层和布置在所述电源电极和所述第一电介质层之间的第一电线网。 该装置还包括与动力电极组件相对设置的接地电极组件,以便形成其中产生等离子体的空腔。 当空腔中存在等离子体时,第一电介质层通过第一电介质层屏蔽第一丝网,其在一端具有出口以提供等离子体以除去氟化聚合物。

    Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide
    5.
    发明授权
    Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide 有权
    用于工程化硅型表面以进行选择性金属沉积以形成金属硅化物的工艺和系统

    公开(公告)号:US08747960B2

    公开(公告)日:2014-06-10

    申请号:US11513446

    申请日:2006-08-30

    IPC分类号: C23C14/02 H05H1/00

    摘要: The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve silicon-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce a silicon-to-metal interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a layer of a metal on a silicon or polysilicon surface of the substrate to form a metal silicide in an integrated system is provided. The method includes removing organic contaminants from the substrate surface in the integrated system, and reducing the silicon or polysilicon surface in the integrated system after removing organic contaminants to convert silicon oxide on the silicon or polysilicon surface to silicon, wherein after reducing the silicon or polysilicon surface, the substrate is transferred and processed in controlled environment to prevent the formation of silicon oxide, the silicon or polysilicon surface is reduced to increase the selectivity of the metal on the silicon surface. The method further includes selectively depositing the layer of the metal on the silicon or polysilicon surface of substrate in the integrated system after reducing the silicon or polysilicon surface. An exemplary system to practice the exemplary method described above is also provided.

    摘要翻译: 这些实施方案通过提供产生硅 - 金属界面的改进的工艺和系统来满足增强电迁移性能,提供较低金属电阻率以及改进铜互连的硅 - 金属界面粘附的需要。 提供了制备衬底的衬底表面以在衬底的硅或多晶硅表面上选择性地沉积金属层以在集成系统中形成金属硅化物的示例性方法。 该方法包括从集成系统中的衬底表面去除有机污染物,以及在去除有机污染物之后减少集成系统中的硅或多晶硅表面,以将硅或多晶硅表面上的氧化硅转化为硅,其中在还原硅或多晶硅之后 表面,在受控环境中转移和处理衬底以防止形成氧化硅,减少硅或多晶硅表面以增加金属在硅表面上的选择性。 该方法还包括在减少硅或多晶硅表面之后,在集成系统中的衬底的硅或多晶硅表面上选择性地沉积金属层。 还提供了用于实践上述示例性方法的示例性系统。

    Computer-based methods and systems for arranging meetings between users and methods and systems for verifying background information of users
    6.
    发明授权
    Computer-based methods and systems for arranging meetings between users and methods and systems for verifying background information of users 失效
    基于计算机的方法和系统,用于安排用户与方法和系统之间的会议,以验证用户的背景信息

    公开(公告)号:US08621005B2

    公开(公告)日:2013-12-31

    申请号:US13096544

    申请日:2011-04-28

    申请人: John Boyd Arif Ayub

    发明人: John Boyd Arif Ayub

    IPC分类号: G06F15/16

    摘要: Methods and systems for verifying, authenticating, and/or rating the identity or profile characteristics of users of online social networks and other websites and applications. And improved systems and methods that allow one or more individuals to meet or otherwise network or connect or transact or exchange information, tangibles or intangibles with other individuals and methods and systems for verifying and/or rating the identity or profiles of users of online social networks and other websites or applications.

    摘要翻译: 用于验证,认证和/或评估在线社交网络和其他网站和应用程序的用户的身份或简档特征的方法和系统。 以及改进的系统和方法,其允许一个或多个个人与其他个人和用于验证和/或评估在线社交网络的用户的身份或配置文件的其他个人和方法和系统相互联系或交流或交换或交换信息,有形资产或无形资产 和其他网站或应用程序。

    Method and apparatus for material deposition
    7.
    发明授权
    Method and apparatus for material deposition 有权
    材料沉积的方法和装置

    公开(公告)号:US08490573B2

    公开(公告)日:2013-07-23

    申请号:US12968114

    申请日:2010-12-14

    IPC分类号: B05C3/02 B05D1/18

    摘要: Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

    摘要翻译: 概括地说,提供了一种在半导体晶片(“晶片”)上沉积材料的方法和装置。 更具体地,该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此,通过化学镀反应将材料沉积在晶片表面上,该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

    Processes and systems for engineering a barrier surface for copper deposition
    9.
    发明授权
    Processes and systems for engineering a barrier surface for copper deposition 有权
    用于工程用于铜沉积的阻挡面的工艺和系统

    公开(公告)号:US08241701B2

    公开(公告)日:2012-08-14

    申请号:US11514038

    申请日:2006-08-30

    IPC分类号: B05D5/12

    摘要: The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve metal-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce an improved metal-to-metal interface, more specifically barrier-to-copper interface. An exemplary method of preparing a substrate surface of a substrate to deposit a metallic barrier layer to line a copper interconnect structure of the substrate and to deposit a thin copper seed layer on a surface of the metallic barrier layer in an integrated system to improve electromigration performance of the copper interconnect is provided. The method includes cleaning an exposed surface of a underlying metal to remove surface metal oxide in the integrated system, wherein the underlying metal is part of a underlying interconnect electrically connected to the copper interconnect. The method also includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, wherein after depositing the metallic barrier layer, the substrate is transferred and processed in controlled environment to prevent the formation of metallic barrier oxide. The method further includes depositing the thin copper seed layer in the integrated system, and depositing a gap-fill copper layer over the thin copper seed layer in the integrated system. An exemplary system to practice the exemplary method described above is also provided.

    摘要翻译: 这些实施方案通过提供改进的工艺和系统来提供改进的金属 - 金属界面,更具体地说是阻隔层,提高了电迁移性能,提供较低的金属电阻率,以及改进铜互连的金属 - 金属界面粘附的需要, 到铜接口。 一种制备衬底的衬底表面的示例性方法,以沉积金属阻挡层以对衬底的铜互连结构进行排列并且在集成系统中在金属阻挡层的表面上沉积薄铜籽晶层以改善电迁移性能 的铜互连。 该方法包括清洁底层金属的暴露表面以去除集成系统中的表面金属氧化物,其中下面的金属是与铜互连电连接的底层互连件的一部分。 该方法还包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列,其中在沉积金属阻挡层之后,将基底在受控环境中转移和加工以防止形成金属阻挡氧化物。 该方法还包括在集成系统中沉积薄铜籽晶层,以及在集成系统中的薄铜种子层上沉积间隙填充铜层。 还提供了用于实践上述示例性方法的示例性系统。