Invention Grant
US08193030B2 Methods of fabricating non-volatile memory devices having carbon nanotube layer and passivation layer
有权
制造具有碳纳米管层和钝化层的非易失性存储器件的方法
- Patent Title: Methods of fabricating non-volatile memory devices having carbon nanotube layer and passivation layer
- Patent Title (中): 制造具有碳纳米管层和钝化层的非易失性存储器件的方法
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Application No.: US12929122Application Date: 2011-01-03
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Publication No.: US08193030B2Publication Date: 2012-06-05
- Inventor: Chang-wook Moon , Joong S. Jeon , El Mostafa Bourim , Hyun-deok Yang
- Applicant: Chang-wook Moon , Joong S. Jeon , El Mostafa Bourim , Hyun-deok Yang
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0115425 20061121
- Main IPC: H01L29/861
- IPC: H01L29/861
Abstract:
Nonvolatile memory devices may be fabricated to include a switching device on a substrate and/or a storage node electrically connected to the switching device. A storage node may include a lower metal layer electrically connected to the switching device, a first insulating layer, a middle metal layer, a second insulating layer, an upper metal layer, a carbon nanotube layer, and/or a passivation layer stacked on the lower metal layer.
Public/Granted literature
- US20110117735A1 Methods of fabricating non-volatile memory devices having carbon nanotube layer and passivation layer Public/Granted day:2011-05-19
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