Invention Grant
- Patent Title: Germanium-based quantum well devices
- Patent Title (中): 锗基量子阱器件
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Application No.: US12655468Application Date: 2009-12-30
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Publication No.: US08193523B2Publication Date: 2012-06-05
- Inventor: Ravi Pillarisetty , Been-Yih Jin , Benjamin Chu-Kung , Matthew V. Metz , Jack T. Kavalieros , Marko Radosavljevic , Roza Kotlyar , Willy Rachmady , Niloy Mukherjee , Gilbert Dewey , Robert S. Chau
- Applicant: Ravi Pillarisetty , Been-Yih Jin , Benjamin Chu-Kung , Matthew V. Metz , Jack T. Kavalieros , Marko Radosavljevic , Roza Kotlyar , Willy Rachmady , Niloy Mukherjee , Gilbert Dewey , Robert S. Chau
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/12
Abstract:
A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple gate dielectric materials allow use of a high-k value gate dielectric.
Public/Granted literature
- US20110156005A1 Germanium-based quantum well devices Public/Granted day:2011-06-30
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