发明授权
- 专利标题： Semiconductor component including a drift zone and a drift control zone
- 专利标题（中）： 半导体元件包括漂移区和漂移控制区
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申请号： US12164630申请日： 2008-06-30
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公开(公告)号： US08193584B2公开(公告)日： 2012-06-05
- 发明人: Anton Mauder , Stefan Sedlmaier , Armin Willmeroth
- 申请人： Anton Mauder , Stefan Sedlmaier , Armin Willmeroth
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A semiconductor component including a drift zone and a drift control zone. One embodiment provides a transistor component having a drift zone, a body zone, a source zone and a drain zone. The drift zone is arranged between the body zone and the drain zone. The body zone is arranged between the source zone and the drift zone.
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