Invention Grant
- Patent Title: Monolithic multi-channel ESD protection device
- Patent Title (中): 单片多通道ESD保护器件
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Application No.: US12651902Application Date: 2010-01-04
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Publication No.: US08199447B2Publication Date: 2012-06-12
- Inventor: Harry Gee , Wenjiang Zeng , Jeffrey C. Dunnihoo
- Applicant: Harry Gee , Wenjiang Zeng , Jeffrey C. Dunnihoo
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
A semiconductor device is described that includes one or more electrostatic discharge (ESD) protection circuits. Each circuit comprises reverse-biased steering diodes connected in series between power rail and signal ground, a bypass Zener diode and a substrate Zener diode. The Zener diodes provide ESD protection and the steering diode cooperate with the substrate Zener diode to provide a bypass function that is substantially symmetric about the signal ground. Noise in the circuit can be shunted using internal and/or external capacitances that can be implemented as Zener diodes.
Public/Granted literature
- US20110163352A1 MONOLITHIC MULTI-CHANNEL ESD PROTECTION DEVICE Public/Granted day:2011-07-07
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