Invention Grant
- Patent Title: Epitaxial substrate, semiconductor light-emitting device using such epitaxial substrate and fabrication thereof
- Patent Title (中): 外延衬底，使用这种外延衬底的半导体发光器件及其制造
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Application No.: US13024226Application Date: 2011-02-09
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Publication No.: US08203136B2Publication Date: 2012-06-19
- Inventor: Jiunn-Yih Chyan , Hung-Chi Chien , Kun-Lin Yang , Wen-Ching Hsu
- Applicant: Jiunn-Yih Chyan , Hung-Chi Chien , Kun-Lin Yang , Wen-Ching Hsu
- Applicant Address: TW Hsinchu
- Assignee: Sino-American Silicon Products Inc.
- Current Assignee: Sino-American Silicon Products Inc.
- Current Assignee Address: TW Hsinchu
- Priority: TW99138094A 20101105
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is formed of oxide of a material different from that forms the crystalline substrate.
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