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US08203161B2 Wavelength converted semiconductor light emitting device 有权
波长转换半导体发光器件

Wavelength converted semiconductor light emitting device
Abstract:
A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A luminescent material is positioned in a path of light emitted by the light emitting layer. A thermal coupling material is disposed in a transparent material. The thermal coupling material has a thermal conductivity greater than a thermal conductivity of the transparent material. The thermal coupling material is positioned to dissipate heat from the luminescent material.
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