Invention Grant
- Patent Title: Wavelength converted semiconductor light emitting device
- Patent Title (中): 波长转换半导体发光器件
-
Application No.: US12624156Application Date: 2009-11-23
-
Publication No.: US08203161B2Publication Date: 2012-06-19
- Inventor: Dmitri Simonian , Grigoriy Basin
- Applicant: Dmitri Simonian , Grigoriy Basin
- Applicant Address: NL Eindhoven US CA San Jose
- Assignee: Koninklijke Philips Electronics N.V.,Philips Lumileds Lighting Company LLC
- Current Assignee: Koninklijke Philips Electronics N.V.,Philips Lumileds Lighting Company LLC
- Current Assignee Address: NL Eindhoven US CA San Jose
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A luminescent material is positioned in a path of light emitted by the light emitting layer. A thermal coupling material is disposed in a transparent material. The thermal coupling material has a thermal conductivity greater than a thermal conductivity of the transparent material. The thermal coupling material is positioned to dissipate heat from the luminescent material.
Public/Granted literature
- US20110121331A1 WAVELENGTH CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2011-05-26
Information query
IPC分类: