公开(公告)号：US20140193931A1

公开(公告)日：2014-07-10

申请号：US14131686

申请日：2012-07-30

申请人： Grigoriy Basin ,  John Edward Epler ,  Paul Scott Martin

发明人： Grigoriy Basin ,  John Edward Epler ,  Paul Scott Martin

IPC分类号： H01L33/48 ,  H01L33/00 ,  H01L33/50

CPC分类号： H01L33/48 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/50 ,  H01L33/501 ,  H01L33/505 ,  H01L33/507 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/27436 ,  H01L2224/29191 ,  H01L2224/32225 ,  H01L2224/83005 ,  H01L2224/8309 ,  H01L2224/83097 ,  H01L2224/83191 ,  H01L2224/83209 ,  H01L2224/94 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2224/27 ,  H01L2224/83 ,  H01L2924/01074 ,  H01L2924/00

摘要： A method according to embodiments of the invention includes positioning a flexible film (48) over a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a semiconductor structure (13) including a light emitting layer sandwiched between an n-type region and a p-type region. The wafer of semiconductor light emitting devices is bonded to a substrate (50) via the flexible film (48). After bonding, the flexible film (48) is in direct contact with the semiconductor structures (13). The method further includes dividing the wafer after bonding the wafer to the substrate (50).

摘要翻译： 根据本发明的实施例的方法包括在半导体发光器件的晶片上定位柔性膜（48），每个半导体发光器件包括半导体结构（13），该半导体结构（13）包括夹在n型区域和 一个p型区域。 半导体发光器件的晶片经由柔性膜（48）与基板（50）接合。 粘合后，柔性膜（48）与半导体结构（13）直接接触。 该方法还包括在将晶片接合到基板（50）之后分割晶片。

公开(公告)号：US20130221835A1

公开(公告)日：2013-08-29

申请号：US13879639

申请日：2011-10-20

申请人： Grigoriy Basin ,  Paul Scott Martin

发明人： Grigoriy Basin ,  Paul Scott Martin

IPC分类号： H05B33/02 ,  F21V9/00 ,  H05B33/10

CPC分类号： H05B33/02 ,  F21V9/00 ,  H01L25/0753 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/24 ,  H01L2933/0041 ,  H01L2933/0058 ,  H05B33/10 ,  Y10T428/24802 ,  Y10T428/2486 ,  Y10T428/24926

摘要： Optical elements (130) are attached to a support film (110) at select locations, the select locations corresponding to locations of light emitting elements (140) on another substrate, e.g. the substrate of the title (150).The film is placed on the substrate containing the light emitting elements such that the optical elements are in contact with their corresponding light emitting elements. The optical elements are laminated to the light emitting elements, and the support film is removed. The optical elements may include wavelength conversion elements, lens elements, combinations of elements, and so on. Other elements, such as conductors and reflectors may also be positioned on the laminate film

摘要翻译： 光学元件（130）在选定位置处附接到支撑膜（110），所述选择位置对应于另一衬底上的发光元件（140）的位置，例如。 标题（150）的基板。该膜被放置在含有发光元件的基板上，使得光学元件与其相应的发光元件接触。 将光学元件层压到发光元件上，并且去除支撑膜。 光学元件可以包括波长转换元件，透镜元件，元件的组合等等。 其他元件，例如导体和反射器也可以定位在层压膜上

公开(公告)号：US08431423B2

公开(公告)日：2013-04-30

申请号：US12503951

申请日：2009-07-16

申请人： Grigoriy Basin ,  Paul S. Martin

发明人： Grigoriy Basin ,  Paul S. Martin

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  H01L33/507 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00012

摘要： An underfill formation technique for LEDs molds a reflective underfill material to encapsulate LED dies mounted on a submount wafer while forming a reflective layer of the underfill material over the submount wafer. The underfill material is then hardened, such as by curing. The cured underfill material over the top of the LED dies is removed using microbead blasting while leaving the reflective layer over the submount surface. The exposed growth substrate is then removed from all the LED dies, and a phosphor layer is molded over the exposed LED surface. A lens is then molded over the LEDs and over a portion of the reflective layer. The submount wafer is then singulated. The reflective layer increases the efficiency of the LED device by reducing light absorption by the submount without any additional processing steps.

摘要翻译： 用于LED的底部填充形成技术模制反射底部填充材料以封装安装在底座晶片上的LED管芯，同时在底座晶片上形成底部填充材料的反射层。 然后将底部填充材料硬化，例如通过固化。 使用微珠喷射除去在LED管芯顶部的固化的底部填充材料，同时将反射层留在底座表面上。 然后将曝光的生长衬底从所有的LED管芯移除，并且在暴露的LED表面上模制荧光体层。 然后将透镜模制在LED上并在反射层的一部分上方。 然后将底座晶片分离。 反射层通过减少副安装座的光吸收而没有任何额外的处理步骤来增加LED器件的效率。

公开(公告)号：US20110223696A1

公开(公告)日：2011-09-15

申请号：US13115475

申请日：2011-05-25

申请人： Grigoriy Basin ,  Frederic Diana ,  Paul S. Martin ,  Dima Simonian

发明人： Grigoriy Basin ,  Frederic Diana ,  Paul S. Martin ,  Dima Simonian

IPC分类号： H01L33/52

CPC分类号： H01L33/54 ,  H01L24/97 ,  H01L33/0079 ,  H01L33/56 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

摘要： An underfill technique for LEDs uses compression molding to simultaneously encapsulate an array of flip-chip LED dies mounted on a submount wafer. The molding process causes liquid underfill material (or a softened underfill material) to fill the gap between the LED dies and the submount wafer. The underfill material is then hardened, such as by curing. The cured underfill material over the top and sides of the LED dies is removed using microbead blasting. The exposed growth substrate is then removed from all the LED dies by laser lift-off, and the underfill supports the brittle epitaxial layers of each LED die during the lift-off process. The submount wafer is then singulated. This wafer-level processing of many LEDs simultaneously greatly reduces fabrication time, and a wide variety of materials may be used for the underfill since a wide range of viscosities is tolerable.

摘要翻译： 用于LED的底部填充技术使用压缩成型来同时封装安装在底座晶片上的倒装芯片LED管芯阵列。 成型工艺使液体底部填充材料（或软化的底部填充材料）填充LED管芯和底座晶片之间的间隙。 然后将底部填充材料硬化，例如通过固化。 使用微珠喷砂除去在LED管芯的顶部和侧面上固化的底部填充材料。 然后通过激光剥离从所有LED管芯去除暴露的生长衬底，并且底部填充物在剥离过程中支持每个LED管芯的脆性外延层。 然后将底座晶片分离。 许多LED的晶片级处理同时大大减少了制造时间，并且可以使用各种各样的材料用于底部填充，因为宽范围的粘度是可以容忍的。

公开(公告)号：US20060102914A1

公开(公告)日：2006-05-18

申请号：US11093961

申请日：2005-03-29

申请人： Willem Smits ,  Robert Hendriks ,  Grigoriy Basin ,  Frans Konijn ,  Robert West ,  Paul Martin ,  Gerard Harbers

发明人： Willem Smits ,  Robert Hendriks ,  Grigoriy Basin ,  Frans Konijn ,  Robert West ,  Paul Martin ,  Gerard Harbers

IPC分类号： H01L33/00 ,  H01L29/22 ,  H01L29/227

CPC分类号： H01L33/58 ,  G02B19/0028 ,  G02B19/0066 ,  G02B19/0071 ,  H01L33/46 ,  H01L33/504 ,  H01L33/507 ,  H01L33/54 ,  H01L33/60 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

摘要： Lenses and certain fabrication techniques are described. A wide-emitting lens refracts light emitted by an LED die to cause a peak intensity to occur within 50-80 degrees off the center axis and an intensity along the center axis to be between 5% and 33% of the peak intensity. The lens is particularly useful in a LCD backlighting application. In one embodiment, the lens is affixed to the backplane on which the LED die is mounted and surrounds the LED die. The lens has a hollow portion that forms an air gap between the LED die and the lens, where the light is bent towards the sides both at the air gap interface and the outer lens surface interface. The lens may be a secondary lens surrounding an interior lens molded directly over the LED die.

摘要翻译： 描述镜片和某些制造技术。 宽发射透镜折射由LED管芯发射的光，使峰强度发生在离中心轴50-80度以内，沿着中心轴的强度在峰值强度的5％至33％之间。 镜头在LCD背光应用中特别有用。 在一个实施例中，透镜固定到其上安装有LED管芯的背板上，并且围绕LED管芯。 透镜具有中空部分，其在LED管芯和透镜之间形成气隙，其中光在气隙界面和外透镜表面界面处朝向侧面弯曲。 透镜可以是围绕直接模制在LED芯片上的内部透镜的次级透镜。

公开(公告)号：US10158049B2

公开(公告)日：2018-12-18

申请号：US14131686

申请日：2012-07-30

申请人： Grigoriy Basin ,  John Edward Epler ,  Paul Scott Martin

发明人： Grigoriy Basin ,  John Edward Epler ,  Paul Scott Martin

IPC分类号： H01L33/48 ,  H01L33/50 ,  H01L33/00 ,  H01L21/683 ,  H01L23/00 ,  H01L33/22

摘要： A method according to embodiments of the invention includes positioning a flexible film (48) over a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a semiconductor structure (13) including a light emitting layer sandwiched between an n-type region and a p-type region. The wafer of semiconductor light emitting devices is bonded to a substrate (50) via the flexible film (48). After bonding, the flexible film (48) is in direct contact with the semiconductor structures (13). The method further includes dividing the wafer after bonding the wafer to the substrate (50).

公开(公告)号：US08384118B2

公开(公告)日：2013-02-26

申请号：US12767845

申请日：2010-04-27

申请人： Stefano Schiaffino ,  Daniel A. Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

发明人： Stefano Schiaffino ,  Daniel A. Steigerwald ,  Mari Holcomb ,  Grigoriy Basin ,  Paul Martin ,  John Epler

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/73204 ,  H01L2924/01322 ,  H01L2924/00

摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

摘要翻译： 描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。 底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。 也可以使用其它粘合技术。 没有使用底层填料。 然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。 在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

公开(公告)号：US08273587B2

公开(公告)日：2012-09-25

申请号：US13115475

申请日：2011-05-25

申请人： Grigoriy Basin ,  Frederic Diana ,  Paul S. Martin ,  Dima Simonian

发明人： Grigoriy Basin ,  Frederic Diana ,  Paul S. Martin ,  Dima Simonian

IPC分类号： H01L21/00

CPC分类号： H01L33/54 ,  H01L24/97 ,  H01L33/0079 ,  H01L33/56 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

摘要： An underfill technique for LEDs uses compression molding to simultaneously encapsulate an array of flip-chip LED dies mounted on a submount wafer. The molding process causes liquid underfill material (or a softened underfill material) to fill the gap between the LED dies and the submount wafer. The underfill material is then hardened, such as by curing. The cured underfill material over the top and sides of the LED dies is removed using microbead blasting. The exposed growth substrate is then removed from all the LED dies by laser lift-off, and the underfill supports the brittle epitaxial layers of each LED die during the lift-off process. The submount wafer is then singulated. This wafer-level processing of many LEDs simultaneously greatly reduces fabrication time, and a wide variety of materials may be used for the underfill since a wide range of viscosities is tolerable.

摘要翻译： 用于LED的底部填充技术使用压缩成型来同时封装安装在底座晶片上的倒装芯片LED管芯阵列。 成型工艺使液体底部填充材料（或软化的底部填充材料）填充LED管芯和底座晶片之间的间隙。 然后将底部填充材料硬化，例如通过固化。 使用微珠喷砂除去在LED管芯的顶部和侧面上固化的底部填充材料。 然后通过激光剥离从所有LED管芯去除暴露的生长衬底，并且底部填充物在剥离过程中支持每个LED管芯的脆性外延层。 然后将底座晶片分离。 许多LED的晶片级处理同时大大减少了制造时间，并且可以使用各种各样的材料用于底部填充，因为宽范围的粘度是可以容忍的。

公开(公告)号：US20110198780A1

公开(公告)日：2011-08-18

申请号：US12706149

申请日：2010-02-16

申请人： Grigoriy BASIN ,  Paul S. MARTIN

发明人： Grigoriy BASIN ,  Paul S. MARTIN

IPC分类号： B29C45/14

CPC分类号： H01L33/504 ,  B29C43/18 ,  H01L25/0753 ,  H01L33/005 ,  H01L33/0075 ,  H01L33/50 ,  H01L33/56 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

摘要： A flexible film comprising a wavelength converting material is positioned over a light source. The flexible film is conformed to a predetermined shape. In some embodiments, the light source is a light emitting diode mounted on a support substrate. The diode is aligned with an indentation in a mold such that the flexible film is disposed between the support substrate and the mold. Transparent molding material is disposed between the support substrate and the mold. The support substrate and the mold are pressed together to cause the molding material to fill the indentation. The flexible film conforms to the shape of the light source or the mold.

摘要翻译： 包括波长转换材料的柔性膜位于光源上。 柔性膜符合预定的形状。 在一些实施例中，光源是安装在支撑衬底上的发光二极管。 二极管与模具中的压痕对准，使得柔性膜设置在支撑基板和模具之间。 透明成型材料设置在支撑基板和模具之间。 将支撑基板和模具压在一起以使模制材料填充凹陷。 柔性膜符合光源或模具的形状。

公开(公告)号：US20110012149A1

公开(公告)日：2011-01-20

申请号：US12503951

申请日：2009-07-16

申请人： Grigoriy Basin ,  Paul S. Martin

发明人： Grigoriy Basin ,  Paul S. Martin

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  H01L33/507 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00012

摘要： An underfill formation technique for LEDs molds a reflective underfill material to encapsulate LED dies mounted on a submount wafer while forming a reflective layer of the underfill material over the submount wafer. The underfill material is then hardened, such as by curing. The cured underfill material over the top of the LED dies is removed using microbead blasting while leaving the reflective layer over the submount surface. The exposed growth substrate is then removed from all the LED dies, and a phosphor layer is molded over the exposed LED surface. A lens is then molded over the LEDs and over a portion of the reflective layer. The submount wafer is then singulated. The reflective layer increases the efficiency of the LED device by reducing light absorption by the submount without any additional processing steps.

摘要翻译： 用于LED的底部填充形成技术模制反射底部填充材料以封装安装在底座晶片上的LED管芯，同时在底座晶片上形成底部填充材料的反射层。 然后将底部填充材料硬化，例如通过固化。 使用微珠喷射除去在LED管芯顶部的固化的底部填充材料，同时将反射层留在底座表面上。 然后将曝光的生长衬底从所有的LED管芯移除，并且在暴露的LED表面上模制荧光体层。 然后将透镜模制在LED上并在反射层的一部分上方。 然后将底座晶片分离。 反射层通过减少副安装座的光吸收而没有任何额外的处理步骤来增加LED器件的效率。