Wavelength converted semiconductor light emitting device
    1.
    发明授权
    Wavelength converted semiconductor light emitting device 有权
    波长转换半导体发光器件

    公开(公告)号:US08203161B2

    公开(公告)日:2012-06-19

    申请号:US12624156

    申请日:2009-11-23

    Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A luminescent material is positioned in a path of light emitted by the light emitting layer. A thermal coupling material is disposed in a transparent material. The thermal coupling material has a thermal conductivity greater than a thermal conductivity of the transparent material. The thermal coupling material is positioned to dissipate heat from the luminescent material.

    Abstract translation: 一种器件包括半导体结构,其包括设置在n型区域和p型区域之间的发光层。 发光材料位于由发光层发射的光的路径中。 热耦合材料设置在透明材料中。 热耦合材料的导热率大于透明材料的热导率。 热耦合材料被定位成散发来自发光材料的热量。

    LED assembly having maximum metal support for laser lift-off of growth substrate
    3.
    发明授权
    LED assembly having maximum metal support for laser lift-off of growth substrate 有权
    LED组件具有用于生长衬底的激光剥离的最大金属支撑

    公开(公告)号:US08384118B2

    公开(公告)日:2013-02-26

    申请号:US12767845

    申请日:2010-04-27

    Abstract: Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

    Abstract translation: 描述了在将LED管芯接合到基座之后,使用激光剥离工艺形成LED结构以去除生长衬底(例如,蓝宝石)的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极,其中电极覆盖LED结构的后表面的至少85%。 底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起,使得LED芯片的整个表面几乎被电极和底座支撑。 也可以使用其它粘合技术。 没有使用底层填料。 然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。 在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

    Underfill process for flip-chip LEDs
    4.
    发明授权
    Underfill process for flip-chip LEDs 有权
    倒装芯片LED的底部填充工艺

    公开(公告)号:US08273587B2

    公开(公告)日:2012-09-25

    申请号:US13115475

    申请日:2011-05-25

    Abstract: An underfill technique for LEDs uses compression molding to simultaneously encapsulate an array of flip-chip LED dies mounted on a submount wafer. The molding process causes liquid underfill material (or a softened underfill material) to fill the gap between the LED dies and the submount wafer. The underfill material is then hardened, such as by curing. The cured underfill material over the top and sides of the LED dies is removed using microbead blasting. The exposed growth substrate is then removed from all the LED dies by laser lift-off, and the underfill supports the brittle epitaxial layers of each LED die during the lift-off process. The submount wafer is then singulated. This wafer-level processing of many LEDs simultaneously greatly reduces fabrication time, and a wide variety of materials may be used for the underfill since a wide range of viscosities is tolerable.

    Abstract translation: 用于LED的底部填充技术使用压缩成型来同时封装安装在底座晶片上的倒装芯片LED管芯阵列。 成型工艺使液体底部填充材料(或软化的底部填充材料)填充LED管芯和底座晶片之间的间隙。 然后将底部填充材料硬化,例如通过固化。 使用微珠喷砂除去在LED管芯的顶部和侧面上固化的底部填充材料。 然后通过激光剥离从所有LED管芯去除暴露的生长衬底,并且底部填充物在剥离过程中支持每个LED管芯的脆性外延层。 然后将底座晶片分离。 许多LED的晶片级处理同时大大减少了制造时间,并且可以使用各种各样的材料用于底部填充,因为宽范围的粘度是可以容忍的。

    REFLECTIVE SUBSTRATEFOR LEDS
    5.
    发明申请
    REFLECTIVE SUBSTRATEFOR LEDS 有权
    反射基板LED

    公开(公告)号:US20110012149A1

    公开(公告)日:2011-01-20

    申请号:US12503951

    申请日:2009-07-16

    Abstract: An underfill formation technique for LEDs molds a reflective underfill material to encapsulate LED dies mounted on a submount wafer while forming a reflective layer of the underfill material over the submount wafer. The underfill material is then hardened, such as by curing. The cured underfill material over the top of the LED dies is removed using microbead blasting while leaving the reflective layer over the submount surface. The exposed growth substrate is then removed from all the LED dies, and a phosphor layer is molded over the exposed LED surface. A lens is then molded over the LEDs and over a portion of the reflective layer. The submount wafer is then singulated. The reflective layer increases the efficiency of the LED device by reducing light absorption by the submount without any additional processing steps.

    Abstract translation: 用于LED的底部填充形成技术模制反射底部填充材料以封装安装在底座晶片上的LED管芯,同时在底座晶片上形成底部填充材料的反射层。 然后将底部填充材料硬化,例如通过固化。 使用微珠喷射除去在LED管芯顶部的固化的底部填充材料,同时将反射层留在底座表面上。 然后将曝光的生长衬底从所有的LED管芯移除,并且在暴露的LED表面上模制荧光体层。 然后将透镜模制在LED上并在反射层的一部分上方。 然后将底座晶片分离。 反射层通过减少副安装座的光吸收而没有任何额外的处理步骤来增加LED器件的效率。

    LED assembly having maximum metal support for laser lift-off of growth substrate
    7.
    发明授权
    LED assembly having maximum metal support for laser lift-off of growth substrate 有权
    LED组件具有用于生长衬底的激光剥离的最大金属支撑

    公开(公告)号:US07736945B2

    公开(公告)日:2010-06-15

    申请号:US11611775

    申请日:2006-12-15

    Abstract: Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

    Abstract translation: 描述了在将LED管芯接合到基座之后,使用激光剥离工艺形成LED结构以去除生长衬底(例如,蓝宝石)的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极,其中电极覆盖LED结构的后表面的至少85%。 底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起,使得LED芯片的整个表面几乎被电极和底座支撑。 也可以使用其它粘合技术。 没有使用底层填料。 然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。 在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

Patent Agency Ranking