Invention Grant
- Patent Title: Device having complex oxide nanodots
- Patent Title (中): 器件具有复杂的氧化物纳米点
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Application No.: US12949558Application Date: 2010-11-18
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Publication No.: US08203179B2Publication Date: 2012-06-19
- Inventor: Nirmal Ramaswamy , Gurtej Sandhu , Bhaskar Srinivasan , John Smythe
- Applicant: Nirmal Ramaswamy , Gurtej Sandhu , Bhaskar Srinivasan , John Smythe
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
Devices are disclosed, such as those having a memory cell. The memory cell includes an active area formed of a semiconductor material; a first dielectric over the semiconductor material; a second dielectric comprising a material having a perovskite structure over the first dielectric; a third dielectric over the second dielectric; and a gate electrode over the third dielectric.
Public/Granted literature
- US20110062511A1 DEVICE HAVING COMPLEX OXIDE NANODOTS Public/Granted day:2011-03-17
Information query
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