发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US12483668申请日: 2009-06-12
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公开(公告)号: US08203380B2公开(公告)日: 2012-06-19
- 发明人: Takayuki Hashimoto , Takashi Hirao , Noboru Akiyama
- 申请人: Takayuki Hashimoto , Takashi Hirao , Noboru Akiyama
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Brundidge & Stanger, P.C.
- 优先权: JP2008-172165 20080701
- 主分类号: H01L25/00
- IPC分类号: H01L25/00
摘要:
In a semiconductor device, a high-side driver is arranged in a region closer to a periphery of a semiconductor substrate than a high-side switch, and a low-side driver is arranged in a region closer to the periphery of the semiconductor substrate than the low-side switch. By this means, a path from a positive terminal of an input capacitor to a negative terminal of the input capacitor via the high-side switch and the low-side switch is short, a path from a positive terminal of a drive capacitor to a negative terminal of the drive capacitor via the low-side driver is short, and a path from a positive terminal of a boot strap capacitor to a negative terminal of the boot strap capacitor via the high-side driver is short, and therefore, the parasitic inductance can be reduced, and the conversion efficiency can be improved.
公开/授权文献
- US20100001790A1 SEMICONDUCTOR DEVICE 公开/授权日:2010-01-07