发明授权
US08206894B2 Resist pattern-forming method and resist pattern miniaturizing resin composition
有权
抗蚀剂图案形成方法和抗蚀剂图案小型化树脂组合物
- 专利标题： Resist pattern-forming method and resist pattern miniaturizing resin composition
- 专利标题（中）： 抗蚀剂图案形成方法和抗蚀剂图案小型化树脂组合物
-
申请号： US12841988申请日： 2010-07-22
-
公开(公告)号： US08206894B2公开(公告)日： 2012-06-26
- 发明人: Takayoshi Abe , Atsushi Nakamura , Gouji Wakamatsu
- 申请人： Takayoshi Abe , Atsushi Nakamura , Gouji Wakamatsu
- 代理机构： Ditthavong Mori & Steiner, P.C.
- 优先权： JP2008-013757 20080124
- 主分类号： G03F7/00
- IPC分类号： G03F7/00 ; G03F7/004 ; G03F7/26 ; G03F7/40
摘要：
A resist pattern-forming method includes forming a first resist pattern using a first positive-tone radiation-sensitive resin composition. A resist pattern-miniaturizing resin composition is applied to the first resist pattern. The resist pattern-miniaturizing resin composition applied to the first resist pattern is baked and developed to form a second resist pattern that is miniaturized from the first resist pattern. A resist pattern-insolubilizing resin composition is applied to the second resist pattern. The resist pattern-insolubilizing resin composition applied to the second resist pattern is baked and washed to form a third resist pattern that is insoluble in a developer and a second positive-tone radiation-sensitive resin composition. A second resist layer is formed on the third resist pattern using the second positive-tone radiation-sensitive resin composition. The second resist layer is exposed and developed to form a fourth resist pattern.
公开/授权文献
信息查询
